Datasheet > F29C51004T12JI

F29C51004T12JI

更新时间： 2024-11-04 21:54:51

品牌	Logo	应用领域
其他 - ETC		闪存存储
页数	文件大小	规格书
16页	101K
描述
The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory

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F29C51004T12JI 数据手册

F29C51004T/F29C51004B

4 MEGABIT (524,288 x 8 BIT)

5 VOLT CMOS FLASH MEMORY

Syn cMO S

Features

Description

The F29C51004T/F29C51004B is a high speed

■ 512Kx8-bit Organization

524,288 x 8 bit CMOS flash memory. Writing or

erasing the device is done with a single 5 Volt

power supply. The device has separate chip enable

CE, write enable WE, and output enable OE

controls to eliminate bus contention.

The F29C51004T/F29C51004B offers a combi-

nation of: Boot Block with Sector Erase/Write

Mode. The end of write/erase cycle is detected by

■ Address Access Time: 70, 90, 120 ns

■ Single 5V ± 10% Power Supply

■ Sector Erase Mode Operation

■ 16KB Boot Block (lockable)

■ 1K bytes per Sector, 512 Sectors

– Sector-Erase Cycle Time: 10ms (Max)

– Byte-Write Cycle Time: 20µs (Max)

■ Minimum 10,000 Erase-Program Cycles

■ Low power dissipation

– Active Read Current: 20mA (Typ)

– Active Program Current: 30mA (Typ)

– Standby Current: 50µA (Max)

■ Hardware Data Protection

DATA Polling of I/O or by the Toggle Bit I/O .

TheF29C51004T/F29C51004B features a

sector erase operation which allows each sector to

be erased and reprogrammed without affecting

data stored in other sectors. The device also

supports full chip erase.

Boot block architecture enables the device to

boot from a protected sector located either at the

top (F29C51004T) or the bottom (F29C51004B).

All inputs and outputs are CMOS and TTL

compatible.

■ Low V Program Inhibit Below 3.5V

■ Self-timed write/erase operations with end-of-cy-

cle detection

– DATA Polling

– Toggle Bit

■ CMOS and TTL Interface

■ Available in two versions

– F29C51004T (Top Boot Block)

– F29C51004B (Bottom Boot Block)

■ Packages:

The F29C51004T/F29C51004B is ideal for

applications that require updatable code and data

storage.

– 32-pin Plastic DIP

– 32-pin TSOP-I

– 32-pin PLCC

Device Usage Chart

Access Time (ns)

Temperature

Operating

Temperature

Range

Package Outline

•

120

Mark

Blank

0°C to 70 °C

•

–40°C to +85°C

•

F29C51004T/F29C51004B V1.0 November 1998

12 3 4 5 6 7...16

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与F29C51004T12JI相关器件

型号	品牌	获取价格	描述	数据表
F29C51004T12P	ETC	获取价格	The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T12PI	ETC	获取价格	The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T12T	ETC	获取价格	The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T12TI	ETC	获取价格	The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70J	ETC	获取价格	The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70JI	ETC	获取价格	The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70P	ETC	获取价格	The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70PI	ETC	获取价格	The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70T	ETC	获取价格	The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory
F29C51004T70TI	ETC	获取价格	The F29C51004T/F29C51004B is a high speed 524,288 x 8 bit CMOS flash memory

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