5秒后页面跳转
F0443EVBI PDF预览

F0443EVBI

更新时间: 2022-06-24 15:42:23
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
65页 6308K
描述
Dual Matched Broadband RF DVGA 0.6GHz to 2.7GHz

F0443EVBI 数据手册

 浏览型号F0443EVBI的Datasheet PDF文件第7页浏览型号F0443EVBI的Datasheet PDF文件第8页浏览型号F0443EVBI的Datasheet PDF文件第9页浏览型号F0443EVBI的Datasheet PDF文件第11页浏览型号F0443EVBI的Datasheet PDF文件第12页浏览型号F0443EVBI的Datasheet PDF文件第13页 
F0443 Datasheet  
Absolute Maximum Ratings  
Stresses greater than those listed below can cause permanent damage to the device. Functional operation of the device at these or any other  
conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions  
for extended periods may affect device reliability.  
Table 2. Absolute Maximum Ratings  
Parameter  
Symbol  
VCC  
Minimum  
-0.3  
Maximum  
+5.5  
Units  
VCC to GND  
V
V
SDATA/SDA, SCLK/SCL, CSb  
VSPI_I3C  
-0.3  
2.2[c]  
STBY_A, STBY_B, DSA1_A, DSA1_B, DSA3_A_BIT0, DSA3_A_BIT1,  
DSA3_B_BIT0, DSA3_B_BIT1, SPI_I3C_SEL, ID_0, ID_1  
V LOGIC  
-0.3  
VCC + 0.25[c]  
V
RFIN_A, RFIN_B externally applied DC voltage  
VRFIN  
+1.4  
+1.4  
+3.6  
+3.6  
V
V
RFOUT_A, RFOUT_B, externally applied DC voltage  
VRFOUT  
RF Input CW Power (RFIN_A or RFIN_B) applied for 24 hours maximum [a]  
Input/Output VSWR < 2:1 in a 50Ω system  
VCC = +5.0V, TEPAD = 105°C [b]  
PRFMAX24_1  
PRFMAX24_2  
PRFMAX24_3  
PRFMAX24_4  
20  
23  
21  
23  
dBm  
dBm  
dBm  
dBm  
Under the Max Gain Condition (Bypass OFF)  
RF Input CW Power (RFIN_A or RFIN_B) applied for 24 hours maximum [a]  
Input/Output VSWR < 2:1 in a 50Ω system  
VCC = +5.0V, TEPAD = 105°C [b]  
Under the Max Gain Condition (Bypass OFF) with DSA0/DSA1 = 6dB Atten  
RF Input CW Power (RFIN_A or RFIN_B) applied for 24 hours maximum [a]  
Input/Output VSWR < 2:1 in a 50Ω system  
VCC = +5.0V, TEPAD = 105°C [b]  
Under the Max Gain Condition (Bypass ON)  
RF Input CW Power (RFIN_A or RFIN_B) applied for 24 hours maximum [a]  
Input/Output VSWR < 2:1 in a 50Ω system  
VCC = +5.0V, TEPAD = 105°C [b]  
Under the Max Gain Condition (Bypass ON) with DSA0/DSA1 = 6dB Atten  
Storage Temperature Range  
TSTOR  
TLEAD  
-65  
+150  
+260  
°C  
°C  
Lead Temperature (soldering, 10s)  
Electrostatic Discharge – HBM  
(JEDEC/ESDA JS-001-2012)  
VESDHBM  
VESDCDM  
2000  
500  
V
V
Electrostatic Discharge – CDM  
(JEDEC 22-C101F)  
[a] Exposure to these maximum RF levels can result in significant VCC current draw due to overdriving the amplifier stage.  
[b] EPAD = Temperature of the exposed paddle.  
[c] Control pins should remain at 0V (±0.3V) while the supply voltage ramps or while it returns to zero.  
T
© 2020 Renesas Electronics Corporation  
10  
September 1, 2020  
 
 

与F0443EVBI相关器件

型号 品牌 描述 获取价格 数据表
F0443LGRI RENESAS Dual Matched Broadband RF DVGA 0.6GHz to 2.7GHz

获取价格

F0443LGRI8 RENESAS Dual Matched Broadband RF DVGA 0.6GHz to 2.7GHz

获取价格

F0448 RENESAS Dual Matched Broadband RF DVGA 3.4GHz to 3.8GHz

获取价格

F0448EVB RENESAS Dual Matched Broadband RF DVGA 3.4GHz to 3.8GHz

获取价格

F0448EVS RENESAS Dual Matched Broadband RF DVGA 3.4GHz to 3.8GHz

获取价格

F0448NBGK RENESAS Dual Matched Broadband RF DVGA 3.4GHz to 3.8GHz

获取价格