Datasheet > ESD5V5U5ULC

ESD5V5U5ULC

更新时间： 2024-11-19 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		脉冲
页数	文件大小	规格书
9页	702K
描述
反向截止电压（Vrwm）:5V;极性/通道数（Channel）:4-Line，Bidirectional;击穿电压（VBR):5.5V;峰值脉冲电流(Ipp):1A;最大钳位电压(Vc):9V;电容（Cj）:0.13pF

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中文翻译

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数据手册

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ESD5V5U5ULC 数据手册

UMW

ESD5V5U5ULC

Feature

•

ESD/transient protection of high speed data lines exceeding:

IEC61000-4-2 (ESD): ±25 kV (air/contact)

IEC61000-4-4 (EFT): ±2.5 kV/±50 A (5/50 ns)

IEC61000-4-5 (Surge): ±6 A (8/20 μs)

•

Maximum working voltage: V_RWM= 5.5 V

Extremely low capacitance: C_L= 0.45 pF I/O to GND (typical)

Very low dynamic resistance: R_DYN= 0.2 Ω (typical) I/O to GND

Very low reverse clamping voltage: V_CL= 9 V (typical) at I_PP= 16 A

Protection of V_BUSwith one line freely selectable

•

Potential applications

•

Protection of all I/O and V_BUSlines in dual USB2.0 ports

•

10/100/1000 Ethernet

DVI, HDMI, FireWire

Maximum ratingsT_A= 25 °C, unless otherwise specified.

Parameter

Symbol

Values

±25

Unit

Note or test condition

ESD contact discharge

ESD

Peak pulse current

I_PP

±6

t_p= 8/20 µs

Operating temperature range

Storage temperature

T_OP

T_stg

-40 to 125

-65 to 150

°C

Attention

Stresses above the maximum values listed here may cause permanent damage to the device.

Exposure to absolute maximum rating conditions for extended periods may affect device

reliability. Maximum ratings are absolute ratings. Exceeding only one of these values may cause

irreversible damage to the component.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...9

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