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ESD5V3S1B-02LRH PDF预览

ESD5V3S1B-02LRH

更新时间: 2024-11-18 10:15:51
品牌 Logo 应用领域
英飞凌 - INFINEON 瞬态抑制器二极管电视局域网
页数 文件大小 规格书
7页 560K
描述
Silicon TVS Diode

ESD5V3S1B-02LRH 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:DFN
包装说明:1.0 X 0.60 MM, 0.4 MM HEIGHT, ROHS COMPLIANT, TSLP-2-17, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.79
Is Samacsys:N最小击穿电压:6 V
最大钳位电压:11 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PBCC-N2最大非重复峰值反向功率耗散:80 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:5.3 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

ESD5V3S1B-02LRH 数据手册

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ESD5V3S1B-02LRH  
Silicon TVS Diode  
ESD / transient protection of data and power lines  
in low voltage applications according to:  
IEC61000-4-2 (ESD): ± ±25 kV (air) 20 kV (contact)  
IEC61000-4-4 (EFT): 50 A / 2.5 kV (5/50 ns)  
IEC61000-4-5 (surge): 5.5 A / 80 W (8/20 µs)  
Small form factor (0402 inch):  
3
1.0 x 0.6 x 0.4 mm  
•±Bi-directional, symmetrical  
working voltage up to ± 5.3 V  
Ultralow and symmetric clamping voltage  
Ultralow dynamic resistance 0.4 Ω  
Very fast response time  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Applications  
Recommended to protect audio lines /  
microphone lines / speaker and  
headset systems in:  
Mobile phones  
Mobile TV  
Set top boxes  
MP3 players  
Minidisc players  
Portable entertainment electronics  
ESD5V3S1B-02LRH  
1
2
Type  
ESD5V3S1B-02LRH  
Package  
TSLP-2-17  
Configuration  
1 line, bi-directional  
Marking  
E1  
2009-12-07  
1

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