Datasheet > ES5DB

ES5DB

更新时间： 2024-10-30 12:56:07

品牌	Logo	应用领域
THINKISEMI		整流二极管
页数	文件大小	规格书
2页	450K
描述
5.0 Ampere Surface Mount Type Super Fast Recovery Rectifier Diodes

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中文翻译

获取价格

数据手册

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ES5DB 数据手册

ES5AB thru ES5JB

Pb Free Plating Product

5.0 Ampere Surface Mount Type Super Fast Recovery Rectifier Diodes

Unit:inch(millimeter)

FEATURE

OUTLINE

Cathode Band

Glass passivated chip junction

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

0.155 (3.94)

0.130 (3.30)

0.086 (2.20)

0.077 (1.95)

For surface mounted applications

Low reverse leakage

Built-in strain relief,ideal for automated placement

High forward surge current capability

High temperature soldering guaranteed:

0.180 (4.57)

0.160 (4.06)

250 C/10 seconds at terminals

0.012 (0.305)

0.006 (0.152)

MECHANICAL DATA

Case:SMB/DO-214AA Package

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode band

Mounting Position: Any

0.096 (2.44)

0.084 (2.13)

0.060 (1.52)

0.030 (0.76)

0.008 (0.2)

0 (0)

Weight: 0.11 gram approximately

0.220 (5.59)

0.205 (5.21)

APPLICATION

LED SMPS/Industrial power supply

HID ballast stabilizer

SMB/DO-214AA

Telecommunication SMPS/LED street lamp

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SYMBOLS

UNITS

ES5AB ES5BB ES5CBES5DB ES5EB ES5GB ES5JB

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VOLTS

100

150 200 300

105 140 210

150 200 300

400

280

400

600

420

600

V^RRM

V^RMS

V^DC

Maximum DC blocking voltage

Maximum average forward rectified current

at TL=75 C

100

I^(AV)

5.0

Amps

Peak forward surge current

I^FSM

V^F

125

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

Volts

0.95

1.3

1.7

Maximum instantaneous forward voltage at 5.0A

Maximum DC reverse current

at rated DC blocking voltage

Maximum reverse recovery time

TA=25 C

TA=100 C

(NOTE 1)

10.0

300.0

I^R

t^rr

Typical junction capacitance (NOTE 2)

C^J

RQ^JA

C/W

58.0

47.0

Typical thermal resistance

Operating junction and storage temperature range

T^J,T^STG

-65 to +150

Note:1.Reverse recovery condition I^F=0.5A,I^R=1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

Page 1/2

http://www.thinkisemi.com/

REV.04

中文翻译

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