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ES5G

更新时间: 2024-01-19 04:43:13
品牌 Logo 应用领域
THINKISEMI 整流二极管
页数 文件大小 规格书
2页 318K
描述
5.0 Ampere Surface Mount Type Super Fast Recovery Rectifier Diodes

ES5G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F2Reach Compliance Code:unknown
风险等级:5.59应用:SUPER FAST RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.7 V
JESD-30 代码:R-PDSO-F2最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:600 V最大反向电流:5 µA
最大反向恢复时间:0.035 µs表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

ES5G 数据手册

 浏览型号ES5G的Datasheet PDF文件第2页 
ES5A thru ES5J  
®
ES5A thru ES5J  
Pb Free Plating Product  
5.0 Ampere Surface Mount Type Super Fast Recovery Rectifier Diodes  
Unit:inch(millimeter)  
FEATURE  
OUTLINE  
Cathode Band  
Glass passivated chip junction  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
For surface mounted applications  
Low reverse leakage  
0.126 (3.20)  
0.114 (2.90)  
0.246 (6.22)  
0.220 (5.59)  
Built-in strain relief,ideal for automated placement  
High forward surge current capability  
High temperature soldering guaranteed:  
250 C/10 seconds at terminals  
0.280 (7.11)  
0.260 (6.60)  
0.012 (0.305)  
0.006 (0.152)  
MECHANICAL DATA  
0.103 (2.62)  
0.079 (2.06)  
Case:SMC/DO-214AB Package  
Terminals: Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity: Color band denotes cathode band  
Mounting Position: Any  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.2)  
0.002(0.05)  
Weight: 0.22 gram approximately  
0.320 (8.13)  
0.305 (7.75)  
APPLICATION  
LED SMPS/Industrial power supply  
HID ballast stabilizer  
SMC/DO-214AB  
Telecommunication SMPS/LED street lamp  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
SYMBOLS  
UNITS  
ES5A ES5B ES5C ES5D ES5E ES5G ES5J  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VOLTS  
VOLTS  
VOLTS  
50  
35  
50  
100  
70  
150 200 300  
105 140 210  
150 200 300  
400  
280  
400  
600  
420  
600  
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
Maximum average forward rectified current  
at TL=75 C  
100  
I(AV)  
5.0  
Amps  
Peak forward surge current  
IFSM  
VF  
125  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
Volts  
0.95  
Maximum instantaneous forward voltage at 5.0A  
1.3  
1.7  
Maximum DC reverse current  
at rated DC blocking voltage  
Maximum reverse recovery time  
TA=25 C  
TA=100 C  
(NOTE 1)  
10.0  
300.0  
M
A
IR  
trr  
ns  
35  
Typical junction capacitance (NOTE 2)  
CJ  
RQJA  
pF  
C/W  
C
58.0  
47.0  
Typical thermal resistance  
Operating junction and storage temperature range  
TJ,TSTG  
-65 to +150  
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A  
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
Page 1/2  
http://www.thinkisemi.com/  
Rev.04  
© 2006 Thinki Semiconductor Co.,Ltd.  

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