Datasheet > ES3KC

ES3KC

更新时间： 2022-02-26 14:34:40

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
4页	1015K
描述
SMC Plastic-Encapsulate Diodes

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数据手册

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ES3KC 数据手册

ES3K C THRU ES3MC

HD CK84

SMC Plastic-Encapsulate Diodes

Super Fast Recovery Rectifier Diode

Features

SMC

●I

800V-1000V

●High surge current capability

●VRRM

Glass passivated chip

●

Polarity: Color band denotes cathode

Applications

●Rectifier

Marking

● ES3XC

X From K To M

ES3

Item

Symbol

Unit

Test Conditions

V_RRM

Repetitive Peak Reverse Voltage

800

1000

560

700

MaximumRMS Voltage

RMS

60HZ Half-sine wave, Resistance

load, T_L=100℃

I_F(AV)

3.0

Average Forward Current

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

I_FSM

100

T_J

℃

-55~+150

Junction Temperature

Storage Temperature

T_STG

-55 ~ +150

Electrical Characteristics (T =25℃Unless otherwise specified)

ES3

Item

Symbol

Unit

Test Condition

V_F

I_F=3.0A

Peak Forward Voltage

4.0

Maximum reverse recovery

time

t_rr

I_F=0.5A,I_R=1.0A,I_rr=0.25A

I_RRM1

I_RRM2

T =25℃

μA

V_RM=V_RRM

Peak Reverse Current

T =100℃

40¹⁾

12¹⁾

R_θ

Between junction and ambient

Between junction and terminal

J-A

Thermal

Resistance(Typical)

℃/W

R_θ

J-L

Notes:

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper

pad areas

igh Diode Semiconductor

12 3 4

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