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ES3KC PDF预览

ES3KC

更新时间: 2024-11-02 01:25:03
品牌 Logo 应用领域
海德 - HDSEMI /
页数 文件大小 规格书
4页 1015K
描述
SMC Plastic-Encapsulate Diodes

ES3KC 数据手册

 浏览型号ES3KC的Datasheet PDF文件第2页浏览型号ES3KC的Datasheet PDF文件第3页浏览型号ES3KC的Datasheet PDF文件第4页 
ES3K C THRU ES3MC  
HD CK84  
SMC Plastic-Encapsulate Diodes  
Super Fast Recovery Rectifier Diode  
Features  
SMC  
I  
3A  
800V-1000V  
High surge current capability  
o
VRRM  
Glass passivated chip  
Polarity: Color band denotes cathode  
Applications  
Rectifier  
Marking  
ES3XC  
:
X From K To M  
ES3  
Item  
Symbol  
Unit  
Test Conditions  
K
M
VRRM  
V
V
Repetitive Peak Reverse Voltage  
800  
1000  
560  
700  
V
MaximumRMS Voltage  
RMS  
60HZ Half-sine wave, Resistance  
load, TL=100  
IF(AV)  
A
A
3.0  
Average Forward Current  
Surge(Non-repetitive)Forward  
Current  
60Hz Half-sine wave ,1 cycle ,  
Ta =25℃  
IFSM  
100  
TJ  
-55~+150  
Junction Temperature  
Storage Temperature  
TSTG  
-55 ~ +150  
Electrical Characteristics (T =25Unless otherwise specified)  
ES3  
Item  
Symbol  
Unit  
Test Condition  
K
M
VF  
IF =3.0A  
Peak Forward Voltage  
V
4.0  
35  
Maximum reverse recovery  
time  
trr  
ns  
IF=0.5A,IR=1.0A,Irr=0.25A  
IRRM1  
IRRM2  
T =25  
5
a
μA  
VRM=VRRM  
Peak Reverse Current  
T =100℃  
a
50  
401)  
121)  
Rθ  
Between junction and ambient  
Between junction and terminal  
J-A  
Thermal  
Resistance(Typical)  
/W  
Rθ  
J-L  
Notes:  
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper  
pad areas  
1
H
igh Diode Semiconductor  

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