Datasheet > ES3CB

ES3CB

更新时间： 2024-11-01 12:57:03

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	359K
描述
3.0A patch fast recovery diode 150V SMB series

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中文翻译

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数据手册

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ES3CB 数据手册

ES3AB - ES3JB

SURFACE MOUNT SUPER FAST RECOVERY DIODES

VOLTAGE RANGE: 50 - 600V

CURRENT: 3.0 A

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop, High Efficiency

Low Power Loss

Super-Fast Recovery Time

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Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMB(DO-214AA)

Dim

Min

3.30

4.06

1.91

0.15

5.00

0.10

0.76

2.00

Max

Mechanical Data

3.94

4.70

2.21

0.31

5.59

0.20

1.52

2.62

Case: SMB/DO-214AA, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.093 grams (approx.)

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol ES3AB ES3BB ES3CB ES3DB ES3EB ES3GB ES3JB Unit

RRM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RWM

100

150

105

200

300

210

400

280

600

420

R(RMS)

RMS Reverse Voltage

140

3.0

Average Rectified Output Current

@T_L= 75°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

100

Forward Voltage

@I_F= 3.0A

0.95

1.25

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

5.0

500

µA

Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

ꢀ

°C/W

°C

j, STG

T T

Operating and Storage Temperature Range

-65 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A. See figure 5.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

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