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ES2B-LTP PDF预览

ES2B-LTP

更新时间: 2024-11-20 13:07:43
品牌 Logo 应用领域
美微科 - MCC 二极管光电二极管功效
页数 文件大小 规格书
3页 903K
描述
Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

ES2B-LTP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:SMA, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:1.52
应用:SUPER FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向电流:5 µA最大反向恢复时间:0.035 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

ES2B-LTP 数据手册

 浏览型号ES2B-LTP的Datasheet PDF文件第2页浏览型号ES2B-LTP的Datasheet PDF文件第3页 
M C C  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ES2A  
THRU  
ES2M  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
2 Amp Super Fast  
Recovery  
Silicon Rectifier  
50 to 1000 Volts  
Features  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
For Surface Mount Applications  
·
·
·
·
·
Extremely Low Thermal Resistance  
Easy Pick And Place  
High Temp Soldering: 250°C for 10 Seconds At Terminals  
Superfast Recovery Times For High Efficiency  
Maximum Ratings  
DO-214AC  
(SMAJ) (High Profile)  
·
·
·
Operating Temperature: -50°C to +150°C  
Storage Temperature: -50°C to +150°C  
Maximum Thermal Resistance; 20°C/W Junction To Lead  
H
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
Cathode Band  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
J
ES2A  
ES2B  
ES2C  
ES2D  
ES2G  
ES2J  
ES2K  
ES2M  
ES2A  
ES2B  
ES2C  
ES2D  
ES2G  
ES2J  
ES2K  
ES2M  
35V  
70V  
100V  
150V  
200V  
400V  
600V  
800V  
1000V  
100V  
105V  
140V  
280V  
420V  
560V  
700V  
150V  
200V  
400V  
600V  
800V  
1000V  
A
C
E
D
B
F
G
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIMENSIONS  
Average Forward  
Current  
IF(AV)  
2.0A  
TJ = 75°C  
INCHES  
MIN  
.078  
.067  
.002  
---  
.035  
.065  
.205  
.160  
.100  
MM  
MIN  
1.98  
1.70  
.05  
---  
.89  
1.65  
5.21  
4.06  
2.57  
DIM  
A
B
C
D
E
MAX  
.116  
.089  
.008  
.02  
.055  
.096  
.224  
.180  
.112  
MAX  
2.95  
2.25  
.20  
NOTE  
Peak Forward Surge  
Current  
IFSM  
50A  
8.3ms, half sine  
.51  
1.40  
2.45  
5.69  
4.57  
2.84  
Maximum  
Instantaneous  
F
G
H
J
Forward Voltage  
ES2A-D  
.975V  
1.35V  
1.60V  
VF  
IR  
IFM = 2.0A;  
TJ = 25°C*  
ES2G-K  
ES2M  
SUGGESTED SOLDER  
PAD LAYOUT  
Maximum DC  
0.090”  
Reverse Current At  
Rated DC Blocking  
Voltage  
5mA  
TJ = 25°C  
150mA TJ = 100°C  
Maximum Reverse  
0.085”  
Recovery Time  
ES2A-D  
50ns  
Trr  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
ES2G-K  
60ns  
ES2M  
100ns  
0.070”  
Typical Junction  
Capacitance  
CJ  
25pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 200 msec, Duty cycle 2%  
www.mccsemi.com  

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