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ES2B-TP PDF预览

ES2B-TP

更新时间: 2024-11-20 21:20:07
品牌 Logo 应用领域
美微科 - MCC 功效光电二极管
页数 文件大小 规格书
4页 246K
描述
Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, HSMA, 2 PIN

ES2B-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AC
包装说明:HSMA, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:6.86
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.05 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

ES2B-TP 数据手册

 浏览型号ES2B-TP的Datasheet PDF文件第2页浏览型号ES2B-TP的Datasheet PDF文件第3页浏览型号ES2B-TP的Datasheet PDF文件第4页 
NOT RECOMMENDED FOR NEW DESIGNS  
USE ES2A-LTP~ES1J-LTP SERIES  
M C C  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ES2A  
THRU  
ES2M  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Micro Commercial Components  
Features  
Halogen free available upon request by adding suffix "-HF"  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
2 Amp Ultra Fast  
Recovery  
Silicon Rectifier  
50 to 1000 Volts  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Compliant. See ordering information)  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Easy Pick And Place  
High Temp Soldering: 260°C for 10 Seconds At Terminals  
Superfast Recovery Times For High Efficiency  
Maximum Ratings  
DO-214AC  
(HSMA) (High Profile)  
Operating Temperature: -50°C to +150°C  
Storage Temperature: -50°C to +150°C  
Maximum Thermal Resistance; 20°C/W Junction To Lead  
H
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
Cathode Band  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
J
ES2A  
ES2B  
ES2C  
ES2D  
ES2G  
ES2J  
ES2K  
ES2M  
ES2A  
ES2B  
ES2C  
ES2D  
ES2G  
ES2J  
ES2K  
ES2M  
35V  
70V  
100V  
150V  
200V  
400V  
600V  
800V  
1000V  
100V  
105V  
140V  
280V  
420V  
560V  
700V  
150V  
200V  
400V  
600V  
800V  
1000V  
A
C
E
D
B
F
G
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIMENSIONS  
Average Forward  
Current  
IF(AV)  
2.0A  
TJ = 75°C  
INCHES  
MIN  
.078  
.067  
.002  
---  
MM  
MIN  
DIM  
A
MAX  
.116  
.089  
.008  
.02  
MAX  
2.95  
2.25  
.20  
NOTE  
1.98  
1.70  
.05  
B
Peak Forward Surge  
Current  
IFSM  
50A  
8.3ms, half sine  
C
D
E
---  
.51  
.035  
.065  
.205  
.160  
.100  
.055  
.096  
.224  
.180  
.112  
.89  
1.40  
2.45  
5.69  
4.57  
2.84  
Maximum  
Instantaneous  
F
1.65  
5.21  
4.06  
2.57  
G
H
J
Forward Voltage  
ES2A-D  
.975V  
1.35V  
1.70V  
VF  
IR  
IFM = 2.0A;  
TJ = 25°C*  
ES2G-J  
ES2K-M  
SUGGESTED SOLDER  
PAD LAYOUT  
Maximum DC  
0.090”  
Reverse Current At  
Rated DC Blocking  
Voltage  
5µA  
TJ = 25°C  
150µA TJ = 100°C  
Maximum Reverse  
0.085”  
Recovery Time  
ES2A-D  
50ns  
60ns  
100ns  
Trr  
CJ  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
Measured at  
1.0MHz, VR=4.0V  
ES2G-J  
ES2K-M  
0.070”  
Typical Junction  
Capacitance  
25pF  
*Pulse test: Pulse width 200 µsec, Duty cycle 2%  
Note: 1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7.  
www.mccsemi.com  
Revision: C  
2013/01/01  
1 of 4  

ES2B-TP 替代型号

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