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ES2C

更新时间: 2024-11-21 14:51:55
品牌 Logo 应用领域
鲁光 - LGE 超快恢复二极管
页数 文件大小 规格书
2页 1277K
描述
超快恢复二极管

ES2C 技术参数

Case Style:SMBIF(A):2
VRRM (V):150IFSM (A):50
VF (V):0.95@ IF (A):2
Maximum reverse current:5TRR(nS):25
class:Diodes

ES2C 数据手册

 浏览型号ES2C的Datasheet PDF文件第2页 
ES2A-ES2K  
2.0 AMPS. Surface Mount Super Fast Rectifiers  
Features  
SMB/DO-214AA  
Glass passivated junction chip  
For surface mounted application  
Low profile package  
0.180(4.57)  
0.160(4.06)  
Built-in strain relief  
Ideal for automated placement  
Easy pick and place  
Superfast recovery time for high efficiency  
Glass passivated chip junction  
High temperature soldering:  
0.086(2.20)  
0.077(1.95)  
0.155(3.94)  
0.130(3.30)  
O
260 C/10 seconds at terminals  
0.209(5.30)  
0.201(5.10)  
Plastic material used carries Underwriters  
Laboratory Classification 94V-0  
0.012(0.30)  
0.006(0.15)  
Mechanical Data  
0.096(2.44)  
0.084(2.13)  
Cases: Molded plastic  
0.059(1.50)  
0.035(0.90)  
Terminals: Pure tin plated, lead free.  
Polarity: Indicated by cathode band  
Weight: 0.093 gram  
0.008(0.20)  
0.002(0.05)  
Dimensions in inches and(millimeters)  
Marking Information  
LGELu Guang Electronic  
XXXXmarking code (ES2A-ES2K)  
XXXX  
Maximum Ratings and Electrical Characteristics  
O
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
ES ES ES ES  
Symbol ES ES ES ES  
2A 2B 2C 2D  
50 100 150 200 300 400 600  
Type Number  
Units  
2G  
2J  
K
2E  
2K  
Maximum Recurrent Peak Reverse  
Voltage  
V
700  
VRRM  
Maximum RMS Voltage  
35  
50 100 150 200 300 400 600  
2.0  
70 105 140 210 280 420  
V
V
490  
700  
VRMS  
VDC  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current See Fig. 1  
A
A
V
I(AV)  
IFSM  
VF  
Peak Forward Surge Current, 8.3 ms  
Single Half Sine-wave Superimposed on  
Rated Load (JEDEC method )  
50  
Maximum Instantaneous Forward Voltage  
@ 2.0A  
0.95  
1.3  
1.7  
Maximum DC Reverse Current  
o
10  
uA  
uA  
@TA =25 C at Rated DC Blocking Voltage  
o
IR  
@ TA=100 C  
350  
Maximum Reverse Recovery Time  
( Note 1 )  
Trr  
35  
nS  
pF  
Typical Junction Capacitance ( Note 2 )  
Cj  
RθJA  
RθJL  
TJ  
25  
20  
Maximum Thermal Resistance (Note 3)  
75  
20  
o
C /W  
o
Operating Temperature Range  
Storage Temperature Range  
-55 to +150  
-55 to +150  
C
o
TSTG  
C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied VR=4.0 Volts  
Notes:  
3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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