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ES2CBF PDF预览

ES2CBF

更新时间: 2024-11-02 15:18:27
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
5页 250K
描述
SMBF

ES2CBF 数据手册

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RoHS  
ES2ABF THRU ES2KBF  
COMPLIANT  
Surface Mount Super Fast Recovery Rectifier  
Features  
● Low profile package  
● Ideal for automated placement  
● Glass passivated chip junction  
● High forward surge capability  
● Super Fast reverse recovery time  
● Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Typical Applications  
For use in high frequency rectification of power supplies,  
inverters, converters, and freewheeling diodes for consumer  
and telecommunication.  
Mechanical Data  
ackage: SMBF  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified  
Maximum Ratings  
a
ES2ABFES2BBFES2CBFES2DBF ES2FBF ES2GBFES2HBF ES2JBF ES2KBF  
SYMBOL UNIT  
PARAMETER  
ES2ABF ES2BBF ES2CBF ES2DBF ES2FBF ES2GBF ES2HBF ES2JBF ES2KBF  
Device marking code  
VRRM  
VRMS  
VDC  
IO  
V
V
V
A
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
400  
280  
400  
500  
350  
500  
600  
420  
600  
800  
560  
800  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
100  
300  
Maximum DC blocking Voltage  
Average rectified output current  
2.0  
@60Hz sine wave, resistance load, TL (Fig.1)  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25℃  
Forward Surge Current (Non-repetitive)  
@1ms, square wave, 1 cycle, Tj=25℃  
50  
A
I
FSM  
100  
Current squared time  
@1ms≤t≤8.3ms Tj=25Rating of per diode  
Typical junction capacitance  
@Measured at 1MHz and Applied Reverse  
Voltage of 4.0 V.D.C  
A2s  
pF  
I2t  
Cj  
10.375  
31  
17  
12  
12  
T
-55 ~ +150  
-55 ~ +150  
Storage temperature  
Junction temperature  
stg  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
ES2AB ES2BB ES2CB ES2DB ES2FB ES2GB ES2HB ES2JB ES2K  
TEST  
CONDITIONS  
PARAMETER  
SYMBOL  
UNIT  
F
F
F
F
F
F
F
F
BF  
Maximum instantaneous  
forward voltage drop per diode  
Maximum reverse recovery  
time  
V
V
IFM=2.0A  
0.95  
1.3  
1.7  
1.85  
F
IF=0.5A,IR=1.0A,  
Irr=0.25A  
ns  
35  
trr  
Maximum DC reverse current  
at  
rated DC blocking voltage per  
diode  
Tj =25℃  
5.0  
I
μA  
R
Tj =125℃  
100  
1 / 5  
S-S4105  
Rev. 1.0, 18-Oct-21  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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