Datasheet > ES1JLHRU

ES1JLHRU

更新时间： 2024-11-19 01:15:31

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	380K
描述
Surface Mount Super Fast Rectifiers

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中文翻译

获取价格

数据手册

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ES1JLHRU 数据手册

ES1AL thru ES1JL

Taiwan Semiconductor

CREAT BY ART

Surface Mount Super Fast Rectifiers

FEATURES

- Glass passivated junction chip

- Ideal for automated placement

- Low profile package

- Low power loss, high efficiency

- Moisture sensitivity level: level 1, per J-STD-020

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

MECHANICAL DATA

Case: Sub SMA

Sub SMA

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - green compound (halogen-free)

Base P/N with prefix "H" on packing code - AEC-Q101 qualified

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

with prefix "H" on packing code meet JESD 201 class 2 whisker test

Polarity: Indicated by cathode band

Weight: 0.019 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

SYMBOL

UNIT

1AL 1BL 1CL 1DL 1FL 1GL 1HL 1JL

Marking code

EAL

EBL ECL EDL

EFL EGL EHL

EJL

600

420

600

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

300

210

300

400

280

400

500

350

500

Maximum DC blocking voltage

Maximum average forward rectified current

100

I_F(AV)

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

V_F

I_R

Maximum instantaneous forward voltage (Note 1)

@ 1 A

0.95

1.3

1.7

Maximum reverse current @ rated VR T_J=25 ℃

T_J=125 ℃

μA

100

Typical junction capacitance (Note 2)

Maximum reverse recovery time (Note 3)

Trr

R_θJL

R_θJA

^OC/W

Typical thermal resistance

^OC

Operating junction temperature range

T_J

- 55 to +150

Storage temperature range

T_STG

Note 1: Pulse test with PW=300μs, 1% duty cycle

Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.

Note 3: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

Document Number: DS_D1405035

Version: I14

12 3 4

中文翻译

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