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ES1JR3

更新时间: 2024-11-19 01:20:15
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4页 377K
描述
Surface Mount Super Fast Rectifiers

ES1JR3 数据手册

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ES1A thru ES1J  
Taiwan Semiconductor  
CREAT BY ART  
Surface Mount Super Fast Rectifiers  
FEATURES  
- Glass passivated junction chip  
- Ideal for automated placement  
- Super fast recovery time for high efficiency  
- Built-in strain rellef  
- Moisture sensitivity level: level 1, per J-STD-020  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
DO-214AC (SMA)  
Molding compound, UL flammability classification rating 94V-0  
Base P/N with suffix "G" on packing code - Green compound (halogen-free)  
Base P/N with prefix "H" on packing code - AEC-Q101 qualified  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test  
with prefix "H" on packing code meet JESD 201 class 2 whisker test  
Polarity: Indicated by cathode band  
Weight: 0.06 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25unless otherwise noted)  
ES  
1A  
50  
ES  
1B  
100  
70  
ES  
1C  
150  
105  
150  
ES  
1D  
200  
140  
200  
ES  
1F  
300  
210  
300  
ES  
1G  
400  
280  
400  
ES  
1H  
500  
350  
500  
ES  
1J  
600  
420  
600  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
35  
Maximum DC blocking voltage  
50  
100  
Maximum average forward rectified current  
IF(AV)  
1
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
VF  
IR  
30  
A
V
Maximum instantaneous forward voltage (Note 1)  
@ 1 A  
0.95  
1.3  
1.7  
5
Maximum reverse current @ rated VR TJ=25 ℃  
TJ=100℃  
μA  
100  
35  
Maximum reverse recovery time (Note 2)  
Typical junction capacitance (Note 3)  
Trr  
Cj  
ns  
16  
18  
pF  
RθJL  
RθJA  
35  
85  
OC/W  
Typical thermal resistance  
OC  
OC  
Operating junction temperature range  
Storage temperature range  
TJ  
- 55 to +150  
- 55 to +150  
TSTG  
Note 1: Pulse test with PW=300μs, 1% duty cycle  
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
Note 3: Measured at 1 MHz and Applied VR=4.0 Volts  
Document Number: DS_D1405052  
Version:J14  

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