Datasheet > ES1JQ

ES1JQ

更新时间： 2024-03-03 10:08:47

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
5页	250K
描述
SMA

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数据手册

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ES1JQ 数据手册

RoHS

ES1AQ THRU ES1JQ

COMPLIANT

Surface Mount Super Fast Recovery Rectifier

Features

● Low profile package

● Ideal for automated placement

● Glass passivated chip junction

● High forward surge capability

● Super Fast reverse recovery time

● Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

● Part no. with suffix “Q” means AEC-Q101 qualified

Typical Applications

For use in high frequency rectification of power supplies,

inverters, converters, and freewheeling diodes for consumer,

automotive and telecommunication.

Mechanical Data

●

ackage: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant, halogen-free

● Terminals: Tin plated leads, solderable per

J-STD-002 and JESD22-B102

●

Cathode line denotes the cathode end

Polarity:

(T =25℃Unless otherwise specified)

■

Maximum Ratings

ES1AQ ES1BQ ES1CQ ES1DQ ES1FQ ES1GQ ES1HQ ES1JQ

PARAMETER

SYMBOL UNIT

ES1A

ES1B

100

ES1C

150

ES1D

200

ES1F

300

ES1G

400

ES1H

500

ES1J

600

Device marking code

V_RRM

I_O

Repetitive peak reverse voltage

Average rectified output current

@ 60Hz sine wave, Resistance load, T_L(Fig.1)

1.0

Surge(non-repetitive)forward current

@ 60Hz Half-sine wave,1 cycle, Ta=25℃

I_FSM

T_stg

T_J

℃

-55~+150

Storage temperature

Junction temperature

(T =25℃Unless otherwise specified)

■Electrical Characteristics

TEST

CONDITIONS

ES1AQ ES1BQ ES1CQ ES1DQ ES1FQ ES1GQ ES1HQ ES1JQ

PARAMETER

SYMBOL

UNIT

Maximum instantaneous

forward voltage drop per diode

V_F

T_RR

C_J

I_FM=1.0A

0.95

1.3

1.7

I_F=0.5A,I_R=1.0A,

I_rr=0.25A

Maximum reverse recovery time

Typical junction capacitance

pF V_R=4V,f=1MHz

Ta=25℃

μA

Maximum DC reverse current at

rated DC blocking voltage per diode

@ V_RM=V_RRM

I_RRM

Ta=125℃

100

1 / 5

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-S3197

Rev.1.5,21-Nov-22

www.21yangjie.com

12 3 4 5

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