Datasheet > ES1004FL

ES1004FL

更新时间： 2024-11-10 02:59:23

品牌	Logo	应用领域
圣诺 - SENO		快速恢复二极管光电二极管
页数	文件大小	规格书
2页	141K
描述
1.0A GLASS PASSIVATED SUPERFAST RECOVERY DIODE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ES1004FL 数据手册

Zibo Seno Electronic Engineering Co., Ltd.

ES1000FL - ES1006FL

1.0A GLASS PASSIVATED SUPERFAST RECOVERY DIODE

Features

Glass passivated device

SOD - 123FL

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop, High Efficiency

Surge Overload Rating to 30 A Peak

Low Power Loss

Cathode Band

Top View

Ultra-Fast Recovery Time

Plastic Case Material has UL Flammability

Classification Rating 94V-O

2.6±0.2

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

Mechanical Data

Case: SOD-123FL, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

0.7±0.3

Weight: 0.01 grams (approx.)

Lead Free: For RoHS / Lead Free Version

3.6±0.2

Dimensions in millimeters

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol

ES1000FLES1001FLES1002FLES1003FLES1004FL ES1005FLES1006FL

UNITS

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

300

210

400

280

500

350

600

420

R(RMS)

RMS Reverse Voltage

Average Rectified Output Current

@T_L= 100°C

I^O

1.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

1.3

1.7

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

1.0

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

2.0

500

µA

Reverse Recovery Time (Note 2)

Typical Junction Capacitance (Note 2)

C^j

R^ꢀ

°C/W

°C

Typical Thermal Resistance (Note 3)

Operating and Storage Temperature Range

T^j,T^STG

-55 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A. See figure 5.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

www.senocn.com

ES1000FL – ES1006FL

1 of 2

中文翻译

下载PDF

与ES1004FL相关器件

型号	品牌	获取价格	描述	数据表
ES1004FL-T1	WTE	获取价格	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon,
ES1005FL	SENO	获取价格	1.0A GLASS PASSIVATED SUPERFAST RECOVERY DIODE
ES1006FL	PANJIT	获取价格	SMALL SURFACE MOUNT SUPER FAST DIODES
ES1006FL	SUNMATE	获取价格	1A patch fast recovery diode 600V SOD-123 series
ES1006FL	SENO	获取价格	1.0A GLASS PASSIVATED SUPERFAST RECOVERY DIODE
ES1006FL	WON-TOP	获取价格	SMD
ES1006FL	JJM	获取价格	超快恢复二极管
ES1006FL-AU	PANJIT	获取价格	SMALL SURFACE MOUNT SUPER FAST DIODES
ES1006FL-T1	WTE	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon,
ES1010FL	JJM	获取价格	超快恢复二极管