Datasheet > ER1A_11

ER1A_11

更新时间： 2024-11-12 10:14:55

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	256K
描述
1 Amp Ultra Fast Recovery Silicon Rectifier 50 to 1000 Volts

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中文翻译

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数据手册

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ER1A_11 数据手册

ER1A

THRU

ER1M

M C C

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

Micro Commercial Components

Features

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Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates

•

1 Amp Ultra Fast

Recovery

Silicon Rectifier

50 to 1000 Volts

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

•

Easy Pick And Place

High Temp Soldering: 260°C for 10 Seconds At Terminals

Ultrafast Recovery Times For High Efficiency

Maximum Ratings

DO-214AA

(HSMB) (Round Lead)

•

Operating Temperature(Tj): -50°C to +150°C

Storage Temperature(Tstg): -50°C to +150°C

Maximum Thermal Resistance; 15°C/W Junction To Lead

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak Reverse

Voltage

50V

Maximum Maximum

Cathode Band

RMS

Voltage

Blocking

Voltage

50V

ER1A

ER1B

ER1C

ER1D

ER1G

ER1J

ER1K

ER1M

ER1A

ER1B

ER1C

ER1D

ER1G

ER1J

ER1K

ER1M

35V

100V

150V

200V

400V

600V

800V

1000V

70V

100V

105V

140V

280V

420V

560V

700V

150V

200V

400V

600V

800V

1000V

Electrical Characteristics @ 25°C Unless Otherwise Specified

DIMENSIONS

Average Forward

Current

I_F(AV)

1.0A

T_J= 75°C

INCHES

MIN

DIM

MAX

.116

.089

.008

.02

MAX

2.95

2.25

.20

NOTE

.078

.075

.002

-----

1.98

1.90

.05

Peak Forward Surge

Current

I_FSM

30A

8.3ms, half sine

-----

.90

.51

.035

.065

.205

.160

.130

.055

.091

.224

.180

.155

1.40

2.32

5.69

4.57

3.94

Maximum

Instantaneous

1.65

5.21

4.06

3.30

Forward Voltage

ER1A-D

.975V

1.35V

1.60V

V_F

I_R

I_FM= 1.0A;

T_J= 25°C*

ER1G-K

ER1M

SUGGESTED SOLDER

PAD LAYOUT

Maximum DC

0.090"

Reverse Current At

Rated DC Blocking

Voltage

5µA

T_J= 25°C

100µA T_J= 100°C

Maximum Reverse

0.085”

Recovery Time

ER1A-D

50ns

T_rr

C_J

I_F=0.5A, I_R=1.0A,

I_rr=0.25A

Measured at

1.0MHz, V_R=4.0V

ER1G-K

60ns

ER1M

100ns

0.070”

Typical Junction

Capacitance

45pF

*Pulse test: Pulse width 200 µsec, Duty cycle 2%

Note: 1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7.

www.mccsemi.com

Revision: A

2011/01/01

1 of 4

12 3 4

中文翻译

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与ER1A_11相关器件

型号	品牌	获取价格	描述	数据表
ER1A-28J-29	HDSEMI	获取价格	SMAJ Plastic-Encapsulate Diodes
ER1AA	SUNMATE	获取价格	1.0A patch fast recovery diode 50V SMA series
ER1AA	MDD	获取价格	SURFACE MOUNT SUPER FAST RECTIFIER
ER1AAFC	PANJIT	获取价格	SMAF-C
ER1AB	LGE	获取价格	Surface Mount Rectifiers
ER1AF	SUNMATE	获取价格	1.0A patch fast recovery diode 50V SMAF series
ER1AF	PANJIT	获取价格	SURFACE MOUNT SUPERFAST RECTIFIER
ER1AF_R2_00001	PANJIT	获取价格	SURFACE MOUNT SUPERFAST RECTIFIER
ER1A-G	SENSITRON	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AA, LEAD FREE, PLASTIC, SMB, 2
ER1A-GT3	SENSITRON	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AA, LEAD FREE, PLASTIC, SMB, 2

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