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ER1B PDF预览

ER1B

更新时间: 2024-11-11 22:49:07
品牌 Logo 应用领域
强茂 - PANJIT 光电二极管
页数 文件大小 规格书
2页 66K
描述
SURFACE MOUNT SUPERFAST RECTIFIER(VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere)

ER1B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:ROHS COMPLIANT, PLASTIC, SMB, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.26
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.95 V
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:YES端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED

ER1B 数据手册

 浏览型号ER1B的Datasheet PDF文件第2页 
ER1A THRU ER1J  
SURFACE MOUNT SUPERFAST RECTIFIER  
VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere  
FEATURES  
l
l
l
l
l
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For surface mounted applications  
SMB/DO-214AA  
Low profile package  
Built-in strain relief  
Easy pick and place  
Superfast recovery times for high efficiency  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O  
Glass passivated junction  
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High temperature soldering:  
¢J  
260 /10 seconds at terminals  
MECHANICAL DATA  
Case: JEDEC DO-214AA molded plastic  
Terminals: Solder plated, solderable per  
MIL-STD-750, Method 2026  
Polarity: Indicated by cathode band  
Standard packaging: 12mm tape (EIA-481)  
Weight: 0.003 ounce, 0.093 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
¢J  
Ratings at 25  
ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SYMBOLS ER1A ER1B ER1C ER1D ER1E ER1G ER1J UNITS  
50  
35  
50  
100  
70  
100  
150  
105  
150  
200  
140  
200  
1.0  
300  
210  
300  
400  
280  
400  
600  
420  
600  
Volts  
Volts  
Volts  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current,  
at TL=100 ¢J  
VRRM  
VRMS  
VDC  
I(AV)  
Amps  
Peak Forward Surge Current 8.3ms single half sine-  
wave superimposed on rated load(JEDEC method)  
Maximum Instantaneous Forward Voltage at 1.0A  
IFSM  
30.0  
Amps  
Volts  
VF  
IR  
0.95  
1.25  
1.7  
¢J  
5.0  
£g  
A
Maximum DC Reverse Current TA=25  
100  
At Rated DC Blocking Voltage TA=100 ¢J  
Maximum Reverse Recovery Time (Note 1)  
Typical Junction capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Operating and Storage Temperature Range  
TRR  
CJ  
R £KJL  
TJ,TSTG  
35.0  
10.0  
34  
nS  
PF  
¢J/W  
¢J  
-50 to +150  
NOTES:  
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A  
2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts  
3. 8.0mm2 (.013mm thick) land areas  

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