Datasheet > EPC2023ENG

EPC2023ENG

更新时间： 2024-11-07 22:58:39

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
6页	1437K
描述
TRANS GAN 30V 60A BUMPED DIE

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中文翻译

获取价格

数据手册

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EPC2023ENG 数据手册

eGaN® FET DATASHEET

EPC2023

EPC2023 – Enhancement Mode Power Transistor

V_DS, 30 V

EFFICIENT POWER CONVERSION

R_DS(on), 1.45 mΩ

I_D, 90 A

HAL

Gallium Nitride’s exceptionally high electron mobility and low temperature coeﬃcient allows very

low R_DS(on), while its lateral device structure and majority carrier diode provide exceptionally low Q_G

and zero Q_RR. The end result is a device that can handle tasks where very high switching frequency,

and low on-time are beneﬁcial as well as those where on-state losses dominate.

EPC2023 eGaN® FETs are supplied only in

passivated die form with solder bumps.

Die Size: 6.05 mm x 2.3 mm

Maximum Ratings

PARAMETER

Drain-to-Source Voltage (Continuous)

Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)

Continuous (T_A= 25°C, R_θJA= 6°C/W)

Pulsed (25°C, T_PULSE= 300 µs)

VALUE

UNIT

V_DS

Applications:

• High Frequency DC-DC Conversion

• Point-of-Load (POL) Converters

• Motor Drive

590

I_D

Gate-to-Source Voltage

V_GS

T_J

• Industrial Automation

Gate-to-Source Voltage

-4

Operating Temperature

-40 to 150

°C

T_STGStorage Temperature

Thermal Characteristics

PARAMETER

TYP

0.4

1.1

UNIT

R_θJC

R_θJB

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Board

°C/W

Thermal Resistance, Junction-to-Ambient (Note 1)

Note 1: R_θJAis determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.

See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.

Static Characteristics (T_J= 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

V_GS= 0 V, I_D= 1.3 mA

V_GS= 0 V, V_DS= 24 V

V_GS= 5 V

MIN

TYP

MAX

UNIT

BV_DSS

I_DSS

Drain-to-Source Voltage

Drain-Source Leakage

0.1

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Gate Threshold Voltage

I_GSS

V_GS= -4 V

0.1

1.4

1.15

1.5

V_GS(TH)

R_DS(on)

V_SD

V_DS= V_GS, I_D= 20 mA

V_GS= 5 V, I_D= 40 A

I_S= 0.5 A, V_GS= 0 V

0.8

2.5

1.45

Drain-Source On Resistance

mΩ

Source-Drain Forward Voltage

All measurements were done with substrate connected to source.

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中文翻译

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