Datasheet > EPC2105ENGRT

EPC2105ENGRT

更新时间： 2024-02-12 02:56:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
9页	2210K
描述
MOSFET 2NCH 80V 9.5A DIE

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数据手册

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EPC2105ENGRT 数据手册

eGaN® FET DATASHEET

EPC2105

EPC2105 – Enhancement-Mode GaN Power

Transistor Half-Bridge

V_DS, 80 V

EFFICIENT POWER CONVERSION

R_DS(on), 14.5 mΩ (Q1), 3.6 mΩ (Q2)

I_D, 10 A (Q1), 40 A (Q2)

HAL

Gallium Nitride’s exceptionally high electron mobility and low temperature coeﬃcient allows very

low R_DS(on), while its lateral device structure and majority carrier diode provide exceptionally low Q_G

and zero Q_RR. The end result is a device that can handle tasks where very high switching frequency,

and low on-time are beneﬁcial as well as those where on-state losses dominate.

Maximum Ratings

DEVICE

PARAMETER

VALUE

UNIT

EPC2105 eGaN® ICs are supplied only in

passivated die form with solder bumps

Die Size: 6.05 mm x 2.3 mm

Drain-to-Source Voltage (Continuous)

Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)

Continuous (T_A= 25°C, R_θJA= 45°C/W)

Pulsed (25°C, T_PULSE= 300 µs)

V_DS

I_D

Applications

Gate-to-Source Voltage

• High Frequency DC-DC

V_GS

T_J

Gate-to-Source Voltage

-4

Beneﬁts

Operating Temperature

–40 to 150

°C

T_STGStorage Temperature

–40 to 150

• High Frequency Operation

Drain-to-Source Voltage (Continuous)

V_DS

• Ultra High Eﬃciency

Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)

Continuous (T_A= 25°C, R_θJA= 11°C/W)

• High Density Footprint

I_D

Pulsed (25°C, T_PULSE= 300 µs)

300

Gate-to-Source Voltage

V_GS

Gate-to-Source Voltage

-4

T_J

Operating Temperature

–40 to 150

°C

T_STGStorage Temperature

Thermal Characteristics

PARAMETER

TYP

0.4

2.5

UNIT

R_θJC

R_θJB

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Board

Thermal Resistance, Junction-to-Ambient (Note 1)

°C/W

Note 1: R_θJAis determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.

See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details

12 3 4 5 6 7...9

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