生命周期: | Obsolete | 包装说明: | DIMM, DIMM144,32 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最长访问时间: | 70 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDMA-N144 | 内存密度: | 67108864 bit |
内存集成电路类型: | EDO DRAM MODULE | 内存宽度: | 64 |
端子数量: | 144 | 字数: | 1048576 words |
字数代码: | 1000000 | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 1MX64 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIMM | 封装等效代码: | DIMM144,32 |
封装形状: | RECTANGULAR | 封装形式: | MICROELECTRONIC ASSEMBLY |
电源: | 3.3 V | 认证状态: | Not Qualified |
刷新周期: | 1024 | 座面最大高度: | 25.4 mm |
自我刷新: | NO | 最大待机电流: | 0.004 A |
子类别: | DRAMs | 最大压摆率: | 0.68 mA |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | NO LEAD | 端子节距: | 0.8 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EOB1UV6414-70TG-S | FUJITSU |
获取价格 |
EDO DRAM Module, 1MX64, 70ns, CMOS, PDMA144 | |
EOB2UV6482-60TG-S | FUJITSU |
获取价格 |
EDO DRAM Module, 2MX64, 60ns, CMOS, PDMA144 | |
EOB2UV6482-70TG-S | FUJITSU |
获取价格 |
EDO DRAM Module, 2MX64, 70ns, CMOS, PDMA144 | |
EOB2UV6482B-60TG-S | FUJITSU |
获取价格 |
EDO DRAM Module, 2MX64, 60ns, CMOS, PDMA144 | |
EOC-20HD100 | ETC |
获取价格 |
HIGH-POWER CHIPLED - EOC - 20 SERIES | |
EOC-20HD200 | ETC |
获取价格 |
HIGH-POWER CHIPLED - EOC - 20 SERIES | |
EOC-20HD50 | ETC |
获取价格 |
HIGH-POWER CHIPLED - EOC - 20 SERIES | |
EOC-20HR100 | ETC |
获取价格 |
HIGH-POWER CHIPLED - EOC - 20 SERIES | |
EOC-20HR200 | ETC |
获取价格 |
HIGH-POWER CHIPLED - EOC - 20 SERIES | |
EOC-20HR50 | ETC |
获取价格 |
HIGH-POWER CHIPLED - EOC - 20 SERIES |