Datasheet > ENA1000A

ENA1000A

更新时间： 2024-11-06 12:51:15

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
7页	211K
描述
General-Purpose Switching Device Applications

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数据手册

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ENA1000A 数据手册

MCH3475

Ordering number : ENA1000A

SANYO Sem iconductors

DATA S HEET

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

MCH3475

Features

•

Ultrahigh speed switching

•

4V drive

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

±20

1.8

DSS

GSS

Drain Current (Pulse)

PW≤10μs, duty cycle 1%

7.2

≤

Allowable Power Dissipation

Channel Temperature

Storage Temperature

When mounted on ceramic substrate (900mm²0.8mm)

0.8

°C

Tch

150

Tstg

--55 to +150

This product is designed to “ESD immunity < 200V ”, so please take care when handling.

Machine Model

Product & Package Information

Package Dimensions

unit : mm (typ)

• Package

: MCPH3

7019A-003

• JEITA, JEDEC

: SC-70, SOT-323

• Minimum Packing Quantity : 3,000 pcs./reel

MCH3475-TL-E

0.15

2.0

Packing Type : TL

Marking

0 to 0.02

0.65

0.3

Electrical Connection

1 : Gate

2 : Source

3 : Drain

SANYO : MCPH3

http://semicon.sanyo.com/en/network

60612TKIM/D1207PE TIIM TC-00001029

No. A1000-1/7

12 3 4 5 6 7

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