Datasheet > EN39SL160L-70NIP

EN39SL160L-70NIP

更新时间： 2024-11-29 06:57:15

品牌	Logo	应用领域
EON		闪存
页数	文件大小	规格书
52页	576K
描述
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only

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EN39SL160L-70NIP 数据手册

EN39SL160H/L

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory With

4Kbytes Uniform Sector, CMOS 1.8 Volt-only

FEATURES

• Single power supply operation

- Full voltage range:1.65-1.95 volt for read and

write operations.

• High performance program/erase speed

- Byte/Word program time: 5µs/7µs typical

- Sector erase time: 90ms typical

- Block erase time: 400ms typical

- Chip erase time: 7 s typical

- Ideal for battery-powered applications.

• High performance

- Access times as fast as 70 ns

• JEDEC Standard Embedded Erase and

Program Algorithms

• Low power consumption (typical values at 5

MHz)

• JEDEC standard DATA# polling and toggle

- 5 mA typical active read current

- 15 mA typical program/erase current

- 0.2 μA typical standby current

bits feature

• Single Sector, Block and Chip Erase

• Block Unprotect Mode

• Uniform Sector Architecture:

- 512 sectors of 4-Kbyte / 2-Kword

- 32 blocks of 64-Kbyte / 32-Kword

- Any sector or block can be erased individually

• Erase Suspend / Resume modes:

Read or program another Sector/Block during

Erase Suspend Mode

• WP#/ACC Input pin:

• Low Vcc write inhibit < 1.2V

- Write protect (WP#) function allows protection

the first or last blocks, regardless of block

protect status

• Minimum 100K endurance cycle

• Package Options

- Acceleration (ACC) function acceleration

program timing.

- 48-pin TSOP (Type 1)

- 48-ball 6mm x 8mm TFBGA

- 48-ball 4mm x 6mm WFBGA

• Block protection:

- Hardware locking of blocks to prevent

program or erase operations within individual

blocks

• Industrial temperature Range

- Additionally, temporary Block Unprotect

allows code changes in previously locked

blocks.

GENERAL DESCRIPTION

The EN39SL160H/L is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 5µs.The

EN39SL160H/L features 1.8V voltage read and write operation, with access time as fast as 70ns to

eliminate the need for WAIT statements in high-performance microprocessor systems.

The EN39SL160H/L has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)

controls, which eliminate bus contention issues. This device is designed to allow either single Sector/Block

or full chip erase operation, where each block can be individually protected against program/erase

operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K

program/erase cycles on each sector or block.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

www.eonssi.com

Rev. E, Issue Date: 2009/07/13

12 3 4 5 6 7...52

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与EN39SL160L-70NIP相关器件

型号	品牌	获取价格	描述	数据表
EN39SL160L-70TI	EON	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS
EN39SL160L-70TIP	EON	获取价格	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS
EN39SL800	EON	获取价格	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN39SL800_11	EON	获取价格	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN39SL800-70BIP	EON	获取价格	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN39SL800-70NIP	EON	获取价格	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN39SL801	EON	获取价格	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN39SL801-70BAP	EON	获取价格	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN39SL801-70BIP	EON	获取价格	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN39SL801-70NAP	EON	获取价格	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only

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