Datasheet > EN39SL801-70NIP

EN39SL801-70NIP

更新时间： 2024-11-29 11:44:55

品牌	Logo	应用领域
EON		闪存
页数	文件大小	规格书
45页	465K
描述
8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only

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EN39SL801-70NIP 数据手册

EN39SL801

8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector,

CMOS 1.8 Volt-only

FEATURES

• Single power supply operation

- Full voltage range: 1.65-1.95 volt for read and

write operations.

• High performance program/erase speed

- Word program time: 8µs typical

- Sector erase time: 90ms typical

- Block erase time: 180ms typical

- Chip erase time: 2s typical

- Ideal for battery-powered applications.

• High performance

- Access times as fast as 70 ns

• JEDEC Standard Embedded Erase and

Program Algorithms

• Low power consumption (typical values at 5

MHz)

• JEDEC standard DATA# polling and toggle

- 5 mA typical active read current

- 15 mA typical program/erase current

- 0.2 μA typical standby current

bits feature

• Single Sector, Block and Chip Erase

• Erase Suspend / Resume modes:

Read or program another Sector/Block during

Erase Suspend Mode

• Uniform Sector Architecture:

- 256 sectors of 2-Kword

- 16 blocks of 32-Kword

- Any sector or block can be erased individually

• Low Vcc write inhibit < 1.2V

• Block protection:

• Minimum 100K endurance cycle

Hardware locking of blocks to prevent

program or erase operations within

individual blocks

• Package Options

- 48-ball 6mm x 8mm TFBGA

- 48-ball 4mm x 6mm WFBGA

• Chip Unprotect Mode

• Industrial temperature and Automotive

temperature Range

GENERAL DESCRIPTION

The EN39SL801 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 524,288 words. Any word can be programmed typically in 8µs.The EN39SL801 features 1.8V

voltage read and write operation, with access time as fast as 70ns to eliminate the need for WAIT

statements in high-performance microprocessor systems.

The EN39SL801 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls,

which eliminate bus contention issues. This device is designed to allow either single Sector/Block or full

chip erase operation, where each block can be individually protected against program/erase operations or

chip unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on

each sector or block.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

www.eonssi.com

Rev. D, Issue Date: 2011/09/15

12 3 4 5 6 7...45

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与EN39SL801-70NIP相关器件

型号	品牌	获取价格	描述	数据表
EN39SL801-90BAP	EON	获取价格	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN39SL801-90BIP	EON	获取价格	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN39SL801-90NAP	EON	获取价格	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN39SL801-90NIP	EON	获取价格	8 Megabit (512K x 16-bit) Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only
EN3C10F26	SWITCH	获取价格	Circular Connector, 10 Contact(s), Glass Filled Polyehylene Polymer, Female, Solder Termin
EN3C10F26AG	SWITCH	获取价格	Circular Connector, 10 Contact(s), Glass Filled Polyehylene Polymer, Female, Solder Termin
EN3C10F26AGK	SWITCH	获取价格	Circular Connector, 10 Contact(s), Glass Filled Polyehylene Polymer, Female, Solder Termin
EN3C10F26AGKL	SWITCH	获取价格	Circular Connector, 10 Contact(s), Glass Filled Polyehylene Polymer, Female, Solder Termin
EN3C10F26C	SWITCH	获取价格	Circular Connector, 10 Contact(s), Glass Filled Polyehylene Polymer, Female, Crimp Termina
EN3C10F26CAGK	SWITCH	获取价格	Circular Connector, 10 Contact(s), Glass Filled Polyehylene Polymer, Female, Crimp Termina

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