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EN29LV640AT-90TIP PDF预览

EN29LV640AT-90TIP

更新时间： 2024-02-08 06:18:15
品牌 Logo 应用领域
EON 闪存
页数 文件大小 规格书
53页 544K
描述
64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

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EN29LV640AT-90TIP 技术参数

生命周期：Transferred包装说明：TSOP1,
Reach Compliance Code：unknownHTS代码：8542.32.00.51
风险等级：5.8最长访问时间：90 ns
备用内存宽度：8JESD-30 代码：R-PDSO-G48
长度：18.4 mm内存密度：67108864 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1端子数量：48
字数：4194304 words字数代码：4000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：4MX16
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL编程电压：3 V
座面最大高度：1.2 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
宽度：12 mm

EN29LV640AT-90TIP 数据手册

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EN29LV640A  
EN29LV640A  
64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory  
Boot Sector Flash Memory, CMOS 3.0 Volt-only  
FEATURES  
• Single power supply operation  
- Full voltage range: 2.7 to 3.6 volts read and  
write operations  
• JEDEC Standard compatible  
• Standard DATA# polling and toggle bits  
feature  
• High performance  
- Access times as fast as 90 ns  
• Erase Suspend / Resume modes:  
Read and program another Sector during  
Erase Suspend Mode  
• Low power consumption (typical values at 5  
MHz)  
- 9 mA typical active read current  
- 20 mA typical program/erase current  
- Less than 1 μA current in standby or automatic  
sleep mode.  
• Support JEDEC Common Flash Interface  
(CFI).  
• Low Vcc write inhibit < 2.5V  
• Minimum 100K program/erase endurance  
• Flexible Sector Architecture:  
cycles.  
- Eight 8-Kbyte sectors, One hundred and  
twenty-seven 32K-Word / 64K-byte sectors.  
- 8-Kbyte sectors for Top or Bottom boot.  
- Sector/Sector Group protection:  
Hardware locking of sectors to prevent  
program or erase operations within individual  
sectors  
Additionally, temporary Sector Group  
Unprotect allows code changes in previously  
locked sectors.  
• RESET# hardware reset pin  
- Hardware method to reset the device to read  
mode.  
• WP#/ACC input pin  
- Write Protect (WP#) function allows  
protection of outermost two boot sectors,  
regardless of sector protect status  
- Acceleration (ACC) function provides  
accelerated program times  
• Secured Silicon Sector  
- Provides a 128-words area for code or data  
• Package Options  
- 48-pin TSOP (Type 1)  
that can be permanently protected.  
- 48 ball 6mm x 8mm TFBGA  
- Once this sector is protected, it is prohibited  
to program or erase within the sector again.  
• Industrial Temperature Range.  
• High performance program/erase speed  
- Word program time: 8µs typical  
- Sector erase time: 100ms typical  
- Chip erase time: 16s typical  
GENERAL DESCRIPTION  
The EN29LV640A is a 64-Megabit, electrically erasable, read/write non-volatile flash memory,  
organized as 8,388,608 bytes or 4,194,304 words. Any word can be programmed typically in 8µs. The  
EN29LV640A features 3.0V voltage read and write operation, with access times as fast as 90ns to  
eliminate the need for WAIT states in high-performance microprocessor systems.  
The EN29LV640A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)  
controls, which eliminate bus contention issues. This device is designed to allow either single Sector or  
full Chip erase operation, where each Sector can be individually protected against program/erase  
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K  
program/erase cycles on each Sector.  
.
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.eonssi.com  
1
Rev. D, Issue Date: 2011/10/26  
1234567...53

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EN29LV640B-70TI EON

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 		64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt

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