Datasheet > 存储 > 闪存> EN29LV640B-70BP

EN29LV640B-70BP

更新时间： 2024-09-26 05:10:27

品牌	Logo	应用领域
EON		闪存
页数	文件大小	规格书
53页	476K
描述
64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

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EN29LV640B-70BP 数据手册

EN29LV640T/B

64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 3.0 Volt-only

FEATURES

• Single power supply operation

- Full voltage range: 2.7 to 3.6 volts read and

write operations

• Standard DATA# polling and toggle bits

feature

• Unlock Bypass Program command supported

• High performance

- Access times as fast as 70 ns

• Erase Suspend / Resume modes:

Read and program another Sector during

Erase Suspend Mode

• Low power consumption (typical values at 5

MHz)

- 9 mA typical active read current

- 20 mA typical program/erase current

- Less than 1 μA current in standby or automatic

sleep mode.

• Support JEDEC Common Flash Interface

(CFI).

• Low Vcc write inhibit < 2.5V

• Minimum 100K program/erase endurance

cycles.

• Flexible Sector Architecture:

• RESET# hardware reset pin

- Eight 8-Kbyte sectors, One hundred and

twenty-seven 32K-Word / 64K-byte sectors.

- 8-Kbyte sectors for Top or Bottom boot.

- Sector/Sector Group protection:

Hardware locking of sectors to prevent

program or erase operations within individual

sectors

Additionally, temporary Sector Group

Unprotect allows code changes in previously

locked sectors.

- Hardware method to reset the device to read

mode.

• WP#/ACC input pin

- Write Protect (WP#) function allows

protection of outermost two boot sectors,

regardless of sector protect status

- Acceleration (ACC) function provides

accelerated program times

• Package Options

• High performance program/erase speed

- Word program time: 8µs typical

- Sector erase time: 500ms typical

- Chip erase time: 64s typical

- 48-pin TSOP (Type 1)

- 48 ball 6mm x 8mm FBGA

• Commercial and Industrial Temperature

Range.

• JEDEC Standard compatible

GENERAL DESCRIPTION

The EN29LV640T/B is a 64-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 8,388,608 bytes or 4,194,304 words. Any word can be programmed typically in 8µs. The

EN29LV640T/B features 3.0V voltage read and write operation, with access times as fast as 70ns to

eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29LV640T/B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)

controls, which eliminate bus contention issues. This device is designed to allow either single Sector

or full Chip erase operation, where each Sector can be individually protected against program/erase

operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K

program/erase cycles on each Sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. B, Issue Date: 2007/05/16

12 3 4 5 6 7...53

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与EN29LV640B-70BP相关器件

型号	品牌	获取价格	描述	数据表
EN29LV640B-70T	EON	获取价格	64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt
EN29LV640B-70TC	EON	获取价格	Flash, 4MX16, 70ns, PDSO48
EN29LV640B-70TCP	EON	获取价格	Flash, 4MX16, 70ns, PDSO48
EN29LV640B-70TI	EON	获取价格	64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt
EN29LV640B-70TIP	EON	获取价格	64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt
EN29LV640B-70TP	EON	获取价格	64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt
EN29LV640B-90B	EON	获取价格	64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt
EN29LV640B-90BC	EON	获取价格	暂无描述
EN29LV640B-90BCP	EON	获取价格	Flash, 4MX16, 90ns, PBGA48
EN29LV640B-90BI	EON	获取价格	64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt

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