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EN29LV640B-70TP PDF预览

EN29LV640B-70TP

更新时间： 2024-01-01 00:02:12
品牌 Logo 应用领域
EON 闪存
页数 文件大小 规格书
53页 476K
描述
64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

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中文翻译

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EN29LV640B-70TP 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：TSSOP, TSSOP48,.8,20Reach Compliance Code：unknown
风险等级：5.92最长访问时间：70 ns
备用内存宽度：8启动块：BOTTOM
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PDSO-G48
内存密度：67108864 bit内存集成电路类型：FLASH
内存宽度：16部门数/规模：8,127
端子数量：48字数：4194304 words
字数代码：4000000最高工作温度：85 °C
最低工作温度：-40 °C组织：4MX16
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行：PARALLEL
电源：3/3.3 V认证状态：Not Qualified
就绪/忙碌：YES部门规模：8K,64K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.03 mA表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL切换位：YES
类型：NOR TYPEBase Number Matches：1

EN29LV640B-70TP 数据手册

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EN29LV640T/B  
EN29LV640T/B  
64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory  
Boot Sector Flash Memory, CMOS 3.0 Volt-only  
FEATURES  
• Single power supply operation  
- Full voltage range: 2.7 to 3.6 volts read and  
write operations  
• Standard DATA# polling and toggle bits  
feature  
• Unlock Bypass Program command supported  
• High performance  
- Access times as fast as 70 ns  
• Erase Suspend / Resume modes:  
Read and program another Sector during  
Erase Suspend Mode  
• Low power consumption (typical values at 5  
MHz)  
- 9 mA typical active read current  
- 20 mA typical program/erase current  
- Less than 1 μA current in standby or automatic  
sleep mode.  
• Support JEDEC Common Flash Interface  
(CFI).  
• Low Vcc write inhibit < 2.5V  
• Minimum 100K program/erase endurance  
cycles.  
• Flexible Sector Architecture:  
• RESET# hardware reset pin  
- Eight 8-Kbyte sectors, One hundred and  
twenty-seven 32K-Word / 64K-byte sectors.  
- 8-Kbyte sectors for Top or Bottom boot.  
- Sector/Sector Group protection:  
Hardware locking of sectors to prevent  
program or erase operations within individual  
sectors  
Additionally, temporary Sector Group  
Unprotect allows code changes in previously  
locked sectors.  
- Hardware method to reset the device to read  
mode.  
• WP#/ACC input pin  
- Write Protect (WP#) function allows  
protection of outermost two boot sectors,  
regardless of sector protect status  
- Acceleration (ACC) function provides  
accelerated program times  
• Package Options  
• High performance program/erase speed  
- Word program time: 8µs typical  
- Sector erase time: 500ms typical  
- Chip erase time: 64s typical  
- 48-pin TSOP (Type 1)  
- 48 ball 6mm x 8mm FBGA  
• Commercial and Industrial Temperature  
Range.  
• JEDEC Standard compatible  
GENERAL DESCRIPTION  
The EN29LV640T/B is a 64-Megabit, electrically erasable, read/write non-volatile flash memory,  
organized as 8,388,608 bytes or 4,194,304 words. Any word can be programmed typically in 8µs. The  
EN29LV640T/B features 3.0V voltage read and write operation, with access times as fast as 70ns to  
eliminate the need for WAIT states in high-performance microprocessor systems.  
The EN29LV640T/B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)  
controls, which eliminate bus contention issues. This device is designed to allow either single Sector  
or full Chip erase operation, where each Sector can be individually protected against program/erase  
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K  
program/erase cycles on each Sector.  
.
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
1
Rev. B, Issue Date: 2007/05/16  
1234567...53

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EN29LV640B-90BI EON

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 		64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt
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EN29LV640B-90T EON

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EN29LV640B-90TC EON

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