EMP310
UPDATED 05/08/2008
21.0 – 24.0 GHz Power Amplifier MMIC
FEATURES
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21.0 – 24.0 GHz Operating Frequency Range
24.0dBm Output Power at 1dB Compression
14.0 dB Typical Small Signal Gain
-40dBc OIMD3 @Each Tone Pout 14dBm
APPLICATIONS
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Point-to-point and point-to-multipoint radio
Military Radar Systems
Dimension: 2250um X 1000um
Thickness: 75um ± 13um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=170mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
UNITS
F
Operating Frequency Range
21.0
24.0
GHz
Output Power at 1dB Gain Compression
Small Signal Gain
P1dB
Gss
23.0
11.0
24.0
14.0
dBm
dB
Output 3rd Order Intermodulation Distortion
OIMD3
Input RL
Output RL
Idss
-40
-10
-10
264
7
-37
-8
dBc
dB
@∆f=10MHz, Each Tone Pout 14dBm
Input Return Loss
Output Return Loss
-8
dB
Saturate Drain Current
Power Supply Voltage
V
DS =3V, VGS =0V
211
-35
317
8
mA
VDD
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
34
oC/W
ºC
Tb
+85
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
VDS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
VALUE
8 V
-4 V
VGS
IDD
Idss
IGSF
Forward Gate Current
Input Power
4mA
PIN
@ 3dB compression
150°C
TCH
Channel Temperature
Storage Temperature
Total Power Dissipation
TSTG
PT
-65/150°C
3.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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Revised May 2008