Datasheet > EMP37N03H

EMP37N03H

更新时间： 2024-11-19 17:15:27

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
7页	269K
描述
EDFN5X6

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中文翻译

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数据手册

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EMP37N03H 数据手册

EMP37N03H

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BV^DSS

30V

3.7mΩ

78A

DSON (MAX.)

UIS, Rg 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

UNIT

Gate‐Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Pulsed Drain Current¹

I_DM

I_AS

160

Avalanche Current

L = 0.1mH, I

L = 0.05mH

T_C= 25 °C

D=60A, RG=25Ω

Avalanche Energy

E_AS

E_AR

180

Repetitive Avalanche Energy²

Power Dissipation

P_D

°C

T_C= 100 °C

Operating Junction & Storage Temperature Range

T_j, T_stg

‐55 to 150

100% UIS testing in condition of V_D=15V, L=0.1mH, V_G=10V, I_L=40A, Rated V_DS=30V N‐CH

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction‐to‐Case

Junction‐to‐Ambient

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

2.5

°C / W

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

2018/5/8ꢀ

p.1ꢀ

12 3 4 5 6 7

中文翻译

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