Datasheet > EMP312

EMP312

更新时间： 2024-11-18 06:57:07

品牌	Logo	应用领域
EXCELICS		放大器功率放大器
页数	文件大小	规格书
2页	184K
描述
21.0 - 24.0 GHz Power Amplifier MMIC

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EMP312 数据手册

EMP312

UPDATED 04/04/2008

21.0 – 24.0 GHz Power Amplifier MMIC

FEATURES

•

21.0 – 24.0 GHz Operating Frequency Range

28.5dBm Output Power at 1dB Compression

13.0 dB Typical Small Signal Gain

-40dBc OIMD3 @Each Tone Pout 18.5dBm

APPLICATIONS

•

Point-to-point and point-to-multipoint radio

Military Radar Systems

Dimension: 2140um X 2650um

Thickness: 75um ± 13um

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25 °C, 50 ohm, VDD=7V, IDQ=760mA)

SYMBOL

PARAMETER/TEST CONDITIONS

MIN

TYP

MAX

UNITS

Operating Frequency Range

21.0

24.0

GHz

Output Power at 1dB Gain Compression

Small Signal Gain

P1dB

Gss

27.0

10.0

28.5

13.0

dBm

Output 3^rdOrder Intermodulation Distortion

OIMD3

Input RL

Output RL

Idss

-40

-15

-37

-10

1288

dBc

@∆f=10MHz, Each Tone Pout 18.5dBm

Input Return Loss

Output Return Loss

-15

Saturate Drain Current

Power Supply Voltage

_DS=3V, V_GS=0V

858

1072

V_DD

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

Operating Base Plate Temperature

^oC/W

-35

+85

ºC

ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2

SYMBOL

V_DS

CHARACTERISTIC

Drain to Source Voltage

Gate to Source Voltage

Drain Current

VALUE

8 V

V_GS

-4 V

I_DD

Idss

I_GSF

Forward Gate Current

Input Power

15mA

P_IN

@ 3dB compression

150°C

T_CH

Channel Temperature

Storage Temperature

Total Power Dissipation

T_STG

-65/150°C

P_T

12.6W

1. Operating the device beyond any of the above rating may result in permanent damage.

2. Bias conditions must also satisfy the following equation V_DS*I_DS< (T_CH–T_HS)/R_TH; where T_HS= ambient temperature

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 2

Revised April 2008

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