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EMP25F12B PDF预览

EMP25F12B

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
15页 1040K
描述
NPT IGBTs 25A, 1200V

EMP25F12B 数据手册

 浏览型号EMP25F12B的Datasheet PDF文件第1页浏览型号EMP25F12B的Datasheet PDF文件第2页浏览型号EMP25F12B的Datasheet PDF文件第3页浏览型号EMP25F12B的Datasheet PDF文件第5页浏览型号EMP25F12B的Datasheet PDF文件第6页浏览型号EMP25F12B的Datasheet PDF文件第7页 
EMP25P12B  
I27149 08/07  
Switching Characteristics:  
For proper operation the device should be used within the recommended conditions.  
TJ = 25°C (unless otherwise specified)  
Symbol  
Qg  
Parameter Definition  
Total Gate Charge (turn on)  
Min  
Typ  
169  
19  
Max Units  
Test Conditions  
Fig.  
IC = 25A  
254  
23  
nC  
mJ  
mJ  
VCC = 600V  
VGE = 15V  
Qge  
Gate – Emitter Charge (turn on)  
Gate – Collector Charge (turn on)  
Turn on Switching Loss  
29  
CT1  
Qgc  
82  
123  
3.6  
1.9  
º
Eon  
CT4  
WF1  
WF2  
IC = 25A, VCC = 600V, TJ = 25 C  
1.3  
3.2  
2.7  
2.0  
5.6  
4.6  
Eoff  
Turn off Switching Loss  
V
GE = 15V, RG =20Ω, L = 200µH  
Etot  
Total Switching Loss  
Tail and Diode Rev. Recovery included  
º
IC = 25A, VCC = 600V, TJ = 125 C  
13,  
15  
CT4  
WF1  
WF2  
Eon  
Eoff  
Etot  
Turn on Switching Loss  
Turn off Switching Loss  
Total Switching Loss  
2.0  
4.7  
2.3  
6.9  
VGE = 15V, RG =20Ω, L = 200µH  
Tail and Diode Rev. Recovery included  
192  
33  
210  
49  
td (on)  
Tr  
Turn on delay time  
Rise time  
14,16  
CT4  
º
IC = 25A, VCC = 600V, TJ = 125 C  
ns  
213  
210  
227  
379  
td (off)  
Tf  
Turn off delay time  
Fall time  
WF1  
WF2  
VGE = 15V, RG =20Ω, L = 200µH  
Cies  
Coes  
Cres  
Input Capacitance  
2200  
210  
85  
VCC = 30V  
VGE = 0V  
f = 1MHz  
PF  
22  
Output Capacitance  
Reverse Transfer Capacitance  
º
TJ = 150 C, I C =100A, VGE = 15V to 0V  
4
RBSOA  
SCSOA  
Reverse Bias Safe Operating Area  
Short Circuit Safe Operating Area  
FULL SQUARE  
CT2  
VCC = 1000V, Vp = 1200V, RG = 5Ω  
º
CT3  
TJ = 150 C, VGE = 15V to 0V  
10  
µs  
WF4  
V
CC = 1000V, Vp= 1200V, RG = 5Ω  
17,18  
19,20  
21  
CT4  
WF3  
º
EREC  
Trr  
Diode reverse recovery energy  
Diode reverse recovery time  
Peak reverse recovery current  
1820  
300  
25  
2400  
32  
µJ  
ns  
A
TJ = 125 C  
IF= 25A, VCC = 600V,  
VGE = 15V, RG =20Ω, L = 200µH  
Irr  
º
º
RthJC_T  
RthJC_D  
Each IGBT to copper plate thermal resistance  
Each Diode to copper plate thermal resistance  
0.65  
0.95  
C/W  
C/W  
See also fig.24 and 25  
24,25  
Module copper plate to heat sink thermal  
resistance. Silicon grease applied = 0.1mm  
º
RthC-H  
0.03  
C/W  
www.irf.com  
4

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