EMP25P12B
I27149 08/07
Switching Characteristics:
For proper operation the device should be used within the recommended conditions.
TJ = 25°C (unless otherwise specified)
Symbol
Qg
Parameter Definition
Total Gate Charge (turn on)
Min
Typ
169
19
Max Units
Test Conditions
Fig.
IC = 25A
254
23
nC
mJ
mJ
VCC = 600V
VGE = 15V
Qge
Gate – Emitter Charge (turn on)
Gate – Collector Charge (turn on)
Turn on Switching Loss
29
CT1
Qgc
82
123
3.6
1.9
º
Eon
CT4
WF1
WF2
IC = 25A, VCC = 600V, TJ = 25 C
1.3
3.2
2.7
2.0
5.6
4.6
Eoff
Turn off Switching Loss
V
GE = 15V, RG =20Ω, L = 200µH
Etot
Total Switching Loss
Tail and Diode Rev. Recovery included
º
IC = 25A, VCC = 600V, TJ = 125 C
13,
15
CT4
WF1
WF2
Eon
Eoff
Etot
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
2.0
4.7
2.3
6.9
VGE = 15V, RG =20Ω, L = 200µH
Tail and Diode Rev. Recovery included
192
33
210
49
td (on)
Tr
Turn on delay time
Rise time
14,16
CT4
º
IC = 25A, VCC = 600V, TJ = 125 C
ns
213
210
227
379
td (off)
Tf
Turn off delay time
Fall time
WF1
WF2
VGE = 15V, RG =20Ω, L = 200µH
Cies
Coes
Cres
Input Capacitance
2200
210
85
VCC = 30V
VGE = 0V
f = 1MHz
PF
22
Output Capacitance
Reverse Transfer Capacitance
º
TJ = 150 C, I C =100A, VGE = 15V to 0V
4
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
CT2
VCC = 1000V, Vp = 1200V, RG = 5Ω
º
CT3
TJ = 150 C, VGE = 15V to 0V
10
µs
WF4
V
CC = 1000V, Vp= 1200V, RG = 5Ω
17,18
19,20
21
CT4
WF3
º
EREC
Trr
Diode reverse recovery energy
Diode reverse recovery time
Peak reverse recovery current
1820
300
25
2400
32
µJ
ns
A
TJ = 125 C
IF= 25A, VCC = 600V,
VGE = 15V, RG =20Ω, L = 200µH
Irr
º
º
RthJC_T
RthJC_D
Each IGBT to copper plate thermal resistance
Each Diode to copper plate thermal resistance
0.65
0.95
C/W
C/W
See also fig.24 and 25
24,25
Module copper plate to heat sink thermal
resistance. Silicon grease applied = 0.1mm
º
RthC-H
0.03
C/W
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