Datasheet > EMP29N05H

EMP29N05H

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
6页	366K
描述
EDFN5X6

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EMP29N05H 数据手册

EMP29N05H

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

45V

2.9mΩ

100A

RDSON (MAX.)

N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

100

UNIT

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current¹

I_D

T_C= 100 °C

Pulsed Drain Current²

I_DM

I_AS

350

Avalanche Current

L = 0.3mH, ID=35A, RG=25Ω

L = 0.05mH

Avalanche Energy

E_AS

E_AR

180

Repetitive Avalanche Energy³

T_C= 25 °C

Power Dissipation

P_D

°C

T_C= 100 °C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction-to-Case

1.9

°C / W

Junction-to-Ambient⁴

¹Package Limited.

R_JA

²Pulse width limited by maximum junction temperature.

³Duty cycle  1％

⁴50°C / W when mounted on a 1 in²pad of 2 oz copper.

2019/3/1

p.1

12 3 4 5 6

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