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EMP25F12B PDF预览

EMP25F12B

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
15页 1040K
描述
NPT IGBTs 25A, 1200V

EMP25F12B 数据手册

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EMP25P12B  
I27149 08/07  
Pins Mapping  
Symbol  
Lead Description  
DC IN+  
DC IN-  
DC +  
DC -  
Th +  
DC Bus plus power input pin  
DC Bus minus power input pin  
DC Bus plus signal connection (Kelvin point)  
DC Bus minus signal connection (Kelvin point)  
Thermal sensor positive input  
Th -  
Thermal sensor negative input  
Sh +  
Sh -  
DC Bus minus series shunt positive input (Kelvin point)  
DC Bus minus series shunt negative input (Kelvin point)  
Gate connections for high side IGBTs  
Emitter connections for high side IGBTs (Kelvin points)  
Output current sensing resistor positive input (IGBTs emitters 1/2/3 side, Kelvin points)  
Output current sensing resistor negative input (Motor side, Kelvin points)  
Gate connections for low side IGBTs  
G1/2/3  
E1/2/3  
R1/2/3 +  
R1/2/3 -  
G4/5/6  
E4/5/6  
OUT1/2/3  
Emitter connections for low side IGBTs (Kelvin points)  
Three phase power output pins  
Absolute Maximum Ratings (TC=25ºC)  
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.  
All voltage parameters are absolute voltages referenced to VDC-, all currents are defined positive into any lead.  
Thermal Resistance and Power Dissipation ratings are measured at still air conditions.  
Symbol  
Parameter Definition  
Min.  
Max.  
1000  
1200  
25  
Units  
VDC  
DC Bus Voltage  
0
0
V
VCES  
Collector Emitter Voltage  
º
IC @ 100C  
IC @ 25C  
ICM  
IGBTs continuous collector current (TC = 100 C, fig. 1)  
º
50  
IGBTs continuous collector current (TC = 25 C,fig 1)  
Pulsed Collector Current (Fig. 3, Fig. CT.5)  
100  
25  
A
º
Inverter  
IF @ 100C  
IF @ 25C  
IFM  
Diode Continuous Forward Current (TC = 100 C)  
º
50  
Diode Continuous Forward Current (TC = 25 C)  
Diode Maximum Forward Current  
Gate to Emitter Voltage  
100  
+20  
192  
77  
VGE  
-20  
V
PD @ 25°C  
PD @ 100°C  
MT  
Power Dissipation (One transistor)  
W
º
Power Dissipation (One transistor, TC = 100 C)  
Mounting Torque  
3.5  
Nm  
ºC  
V
T J  
Operating Junction Temperature  
Storage Temperature Range  
Isolation Voltage to Base Copper Plate  
-40  
-40  
+150  
+125  
+2500  
Power  
Module  
TSTG  
Vc-iso  
-2500  
www.irf.com  
2

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