Datasheet > EMP29N04ES

EMP29N04ES

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
6页	906K
描述
TO220-3

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EMP29N04ES 数据手册

EMP29N04ES

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

40V

2.9mΩ

221A

RDSON (MAX.)

N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

221

139

674

UNIT

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

Pulsed Drain Current¹

I_DM

I_AS

Avalanche Current

L = 0.1mH

Avalanche Energy

E_AS

E_AR

236

118

227

Repetitive Avalanche Energy²

L = 0.05mH

T_C= 25 °C

T_C= 100 °C

Power Dissipation

P_D

°C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

100% UIS testing in condition of V_D=20V, L=0.1mH, V_G=10V, I_L=40A, Rated V_DS=40V N-CH

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

Junction-to-Ambient

SYMBOL

R_JC

TYPICAL

MAXIMUM

0.55

UNIT

°C / W

62.5

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

2019/9/6

p.1

12 3 4 5 6

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