Datasheet > EMLS232UAW-6E

EMLS232UAW-6E

更新时间： 2024-11-07 03:24:39

品牌	Logo	应用领域
EMLSI		动态存储器
页数	文件大小	规格书
14页	513K
描述
512K x 32 x 4Banks Low Power SDRAM Specificaton

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EMLS232UAW-6E 数据手册

EMLS232UA Series

512K x 32 x 4Banks Low Power SDRAM

Document Title

512K x 32 x 4Banks Low Power SDRAM Specificaton

Revision History

Revision No.

0.0

History

Draft Date

Apr 7 , 2006

Remark

Draft

Initial Draft

0.1

DC parameter values are changed

Jul 21 , 2006

Advanced

DC parameter values are changed.

Wafer spec & PAD allocation are attached.

PAD coordinates are not fixed (TBD).

Special MRS mode (Wrap off) supported.

0.2

Sep 2 , 2006

Advanced

Pad allocation changed.

(NC Pad added to right bottom)

0.3

Sep 21 , 2006

Advanced

0.4

0.5

0.6

Pad coordinates are updated.

Dec 6 , 2006

Dec 19 , 2006

Sep 10 , 2007

Advanced

Pad allocation changed. (BA0,BA1)

DC parameter values are revised.

Emerging Memory & Logic Solutions Inc.

4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-717

Tel : +82-64-740-1700 Fax : +82-64-740-1749~1750 Homepage : www.emlsi.com

The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your

questions about device. If you have any questions, please contact the EMLSI office.

Rev 0.6

12 3 4 5 6 7...14

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