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EMH6_1 PDF预览

EMH6_1

更新时间: 2024-11-14 03:34:19
品牌 Logo 应用领域
罗姆 - ROHM 晶体数字晶体管
页数 文件大小 规格书
3页 70K
描述
General purpose (dual digital transistors)

EMH6_1 数据手册

 浏览型号EMH6_1的Datasheet PDF文件第2页浏览型号EMH6_1的Datasheet PDF文件第3页 
EMH6 / UMH6N / IMH6A  
Transistors  
General purpose (dual digital transistors)  
EMH6 / UMH6N / IMH6A  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Two DTC144E chips in a EMT or UMT or SMT  
package.  
EMH6  
( )  
3
( )  
2
( )  
1
( )  
4
( )  
5
( )  
6
1.2  
1.6  
zEquivalent circuit  
EMH6 / UMH6N  
IMH6A  
(4) (5)  
(3)  
(2)  
(1)  
(6)  
R1  
R1  
ROHM : EMT6  
Each lead has same dimensions  
R2  
R2  
R2  
R2  
DTr  
2
DTr1  
DTr2  
DTr  
1
R1  
R1  
R
R
=47kΩ  
1=47kΩ  
UMH6N  
(4) (5)  
(6)  
(3) (2)  
(1)  
2
1.25  
2.1  
zPackage, marking, and packaging specifications  
Type  
EMH6  
EMT6  
H6  
UMH6N  
UMT6  
H6  
IMH6A  
SMT6  
H6  
Package  
0.1Min.  
Marking  
Code  
T2R  
TR  
T108  
3000  
ROHM : UMT6  
EIAJ : SC-88  
Each lead has same dimensions  
Basic ordering unit (pieces)  
8000  
3000  
IMH6A  
zAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
Limits  
Unit  
V
Supply voltage  
VCC  
50  
40  
1.6  
2.8  
Input voltage  
V
IN  
V
10  
Output current  
I
O
30  
mA  
mA  
COLLECTOR CURRENT  
I
C(MAX)  
100  
EMH6 / UMH6N  
150(TOTAL)  
300(TOTAL)  
150  
1  
2  
Pd  
mW  
Power dissipation  
0.3to0.6  
IMH6A  
Junction temperature  
Storage temperature  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
Tj  
°C  
°C  
ROHM : SMT6  
EIAJ : SC-74  
Each lead has same dimensions  
Tstg  
55 to +150  
zElectrical characteristics (Ta = 25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
0.5  
Conditions  
=100µA  
=2mA  
=10mA/0.5mA  
=5V  
CC=50V, V  
/V =5mA/5V  
Unit  
V
V
I (off)  
V
CC=5V, I  
=0.3V, I  
O
Input voltage  
V
I (on)  
3
V
O
O
Output voltage  
Input current  
V
O (on)  
0.1  
0.3  
0.18  
0.5  
61.1  
1.2  
V
mA  
µA  
kΩ  
I
O
/I  
I
I
I
V
V
I
Output current  
DC current gain  
Input resistance  
Resistance ratio  
I
O (off)  
I
=0V  
G
I
68  
32.9  
0.8  
47  
1
I
O
O
R1  
R2  
/ R1  
Transition frequency  
f
T
250  
MHz  
V
CE=10V, I  
E
=−5mA, f=100MHz  
Transition frequency of the device.  
Rev.A  
1/2  

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