JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
Dual Digital Transistors (NPN+NPN)
EMH9
SOT-563
FEATURES
z
z
z
Two DTC114Ys chips in a package.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
MARKING:H9
Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Unit
Limits
Supply voltage
Input voltage
VCC
VIN
50
-6~40
70
V
V
IO
Output current
mA
mW
℃
IC(MAX)
Pd
100
Power dissipation
150(TOTAL)
Operation Junction and
Storage Temperature Range
TJ,Tstg
-55~+150
Electrical characteristics (Ta=25℃)
Parameter
Symbol
VI(off)
VI(on)
VO(on)
II
Min.
0.3
Typ
Max.
Unit
Conditions
VCC=5V ,IO=100µA
VO=0.3V ,IO=1 mA
IO/II=5mA/0.25mA
VI=5V
Input voltage
V
1.4
0.3
Output voltage
Input current
V
0.88
0.5
mA
μA
Output current
IO(off)
GI
VCC=50V, VI=0
VO=5V ,IO=5mA
DC current gain
Input resistance
Resistance ratio
Transition frequency
68
7
R1
10
4.7
250
13
KΩ
R2/R1
fT
3.7
5.7
MHz
VCE=10V ,IE=-5mA,f=100MHz
1
www.jscj-elec.com
Rev. - 2.0