EMH7TR

更新时间： 2024-11-14 13:07:39

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
3页	63K
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中文翻译

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数据手册

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EMH7TR 数据手册

EMH7 / UMH7N

Transistors

General purpose (dual digital transistors)

EMH7 / UMH7N

zExternal dimensions (Unit : mm)

zFeatures

1) Two DTC143T chips in a EMT or UMT package.

EMH7

1.6

0.5

1.0

0.5 0.5

( )

zEquivalent circuits

EMH7 / UMH7N

(

)

( )

(3)

(2)

(1)

0.22

0.13

Each lead has same dimensions

(4) (5)

(6)

R1=4.7kΩ

UMH7N

1.25

2.1

zPackage, marking, and packaging specifications

Type

Package

EMH7

EMT6

UMH7N

UMT6

0.1Min.

Marking

Code

ROHM

EIAJ

UMT6

Each lead has same dimensions

Basic ordering unit (pieces)

8000

3000

SC-88

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-base voltage

VCBO

VCEO

VEBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

°C

∗

Power dissipation

150(TOTAL)

150

Junction temperature

Storage temperature

Tstg

−55 to +150

∗ 120mW per element must not be exceeded.

zElectrical characteristics (Ta=25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

BV^CBO

BVCEO

BVEBO

Min.

Typ.

−

Max.

−

Conditions

Unit

=50µA

=1mA

−

=50µA

CB=50V

EB=4V

CBO

EBO

CE(sat)

−

0.5

0.3

600

−

µA

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

−

100

−

CE=5V, I

CE=10V, I

=5mA/0.25mA

250

4.7

−

MHz

kΩ

=1mA

= −5mA, f=100MHz

∗

Transition frequency

Input resistance

3.29

6.11

−

∗Transition frequency of the device.

1/2

12 3

中文翻译

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