Datasheet > EMG6

EMG6

更新时间： 2024-01-08 09:18:59

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
2页	66K
描述
General purpose (dual digital transistors)

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中文翻译

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数据手册

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EMG6 数据手册

EMG6 / UMG6N / UMH14N / FMG6A / IMH14A / IMH15A

Transistors

General purpose (dual digital transistors)

EMG6 / UMG6N / UMH14N / FMG6A /

IMH14A / IMH15A

!Features

1) Two DTC114T chips in a EMT or UMT or SMT package.

!Equivalent circuit

IMH15A

EMG6 / UMG6N

FMG6

UMH14N

IMH14A

(3)

(2)

(1)

(4)

(5)

(6)

(4)

(5)

(6)

(3)

(2)

(1)

(3)

(4)

(5)

(4)

(5)/(6)

(2)

(1)

(4) (5)

(6)

(3) (2)

(1)

(3)

(2)

(1)

!Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-base voltage

VCBO

VCEO

VEBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

EMG6 / UMG6N / UMH14N

FMG6A / IMH14A / IMH15A

150(TOTAL)

300(TOTAL)

150

Collector power

dissipation

Junction temperature

Storage temperature

°C

Tstg

−55~+150

!Electrical characteristics (Ta=25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

BV^CBO

BVCEO

BVEBO

Min.

Typ.

−

Max.

−

Conditions

Unit

=50µA

=1mA

−

=50µA

CB=50V

EB=4V

CBO

EBO

CE(sat)

−

0.5

0.3

600

−

µA

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

−

100

−

C/I

=5mA/0.5mA

=5V/1mA

250

−

MHz

kΩ

CE/I

Transition frequency

CE=10V, I

=−5mA, f=100MHz

∗

Input resistance

32.9

61.1

−

∗Transition frequency of the device.

!Package, marking, and packaging specifications

Type

EMG6

EMT5

UMG6N UMH14N FMG6A

IMH14A

SMT6

H14

IMH15A

SMT6

H15

Package

UMT5

UMT6

H14

SMT5

Marking

Code

T2R

T148

3000

T108

T110

3000

Basic ordering unit (pieces)

8000

3000

中文翻译

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