是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SC-107 |
包装说明: | SMALL OUTLINE, R-PDSO-F5 | 针数: | 5 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | Factory Lead Time: | 13 weeks |
风险等级: | 1.74 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PDSO-F5 |
JESD-609代码: | e2 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 5 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.15 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
端子面层: | TIN COPPER | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 250 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
UMG6NTR | ROHM |
完全替代 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, UMT5, S | |
UMG4NTR | ROHM |
完全替代 |
NPN 100mA 50V Complex Digital Transistors |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EMG8 | HTSEMI |
获取价格 |
dual digital transistors ( NPN+ NPN) | |
EMG8 | ROHM |
获取价格 |
Emitter common (dual digital transistors) | |
EMG8 | CJ |
获取价格 |
SOT-553 | |
EMG8 | BL Galaxy Electrical |
获取价格 |
50V,100mA,NPN Bipolar Digital Transistor | |
EMG8T2R | ROHM |
获取价格 |
NPN 100mA 50V Complex Digital Transistors | |
EMG9 | ROHM |
获取价格 |
Emitter common (dual digital transistors) | |
EMG90-H15MMKLAR | PHOENIX |
获取价格 |
Terminal Block Accessory | |
EMG9T2R | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT5, 5 | |
EMGC-60-P-G12-SEC-67 | FESTO |
获取价格 |
Gearbox | |
EMGC-60-P-G4-SEC-67 | FESTO |
获取价格 |
Gearbox |