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EMG8 PDF预览

EMG8

更新时间: 2023-12-06 20:08:53
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
3页 529K
描述
SOT-553

EMG8 数据手册

 浏览型号EMG8的Datasheet PDF文件第2页浏览型号EMG8的Datasheet PDF文件第3页 
ANGJING ELECTRONICS TECHNOLOGY CO., LTD  
ransistors (Built-in Resistors)  
EMG8 Dual Digital Transistors (NPN+NPN)  
FEATURES  
SOT-553  
z
z
Two DTC143Z chips in a package  
Mounting cost and area can be cut in half  
Marking: G8  
Absolute maximum ratings (Ta=25)  
Symbol  
Parameter  
Supply Voltage  
Value  
50  
Units  
V
VCC  
Vi  
Input voltage  
-5~30  
100  
V
Output current  
Power dissipation  
mA  
mW  
IO  
150  
PD  
Operation Junction and  
Storage Temperature Range  
TJ,Tstg  
-55~+150  
Electrical Characteristics (Ta=25)  
Parameter  
Symbol  
Test conditions  
Min  
Typ  
Max  
Unit  
Input turn-on voltage  
Input cut-off voltage  
Output voltage  
Vi(on)  
Vi(off)  
VO(on)  
Ii  
VCC=0.3V, IO=5mA  
1.3  
V
V
VCC=5V, IO=100µA  
0.5  
IO=5mA, Ii=0.25mA  
Vi =5V  
0.3  
1.8  
0.5  
V
Input cut-off current  
Output cut-off current  
DC current gain  
mA  
µA  
IO(off)  
Gi  
VCC=50V, Vi=0  
VO =5V, IO=10mA  
80  
Transition frequency  
Input resistance  
fT  
VCE =10V, IC=5mA, f =100MHz  
250  
MHz  
R1  
3.29  
8
6.11  
12  
K  
Resistance ratio  
R2/R1  
www.jscj-elec.com  
1
Rev. - 2.0  

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