Datasheet > EM68B16CWQH-18H

EM68B16CWQH-18H

更新时间： 2022-02-26 12:34:35

品牌	Logo	应用领域
钰创 - ETRON		动态存储器双倍数据速率
页数	文件大小	规格书
60页	1029K
描述
32M x 16 bit DDRII Synchronous DRAM (SDRAM)

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EM68B16CWQH-18H 数据手册

EM68B16CWQH

EtronTech

Figure 37.2.CKE intensive environment

CK#

CKE

t_CKE

t_XP

CMD

REF

t_REFI= 3.9 µs

NOTE: The pattern shown above can repeat over a long period of time. With this pattern, DRAM guarantees all AC and DC timing & voltage

specifications and DLL operation with temperature and voltage drift

Figure 38. Read to power-down entry

Tx+1

Tx+2

Tx+3

Tx+4

Tx+5

Tx+6

Tx+7

Tx+8

Tx+9

CK#

Read operation starts with a read command and

CMD

CKE

CKE should be kept HIGH until the end of burst operation

BL=4

AL+CL

t_IS

DQS

DQS#

Tx+1

Tx+2

Tx+3

Tx+4

Tx+5

Tx+6

Tx+7

Tx+8

Tx+9

CK#

CMD

CKE

CKE should be kept HIGH until the end of burst operation

BL=8

AL+CL

t_IS

DQS

DQS#

Rev. 1.6

Oct. /2015

1...53 54 555657 58 59 60

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