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EM68B16CWQH-18H PDF预览

EM68B16CWQH-18H

更新时间: 2022-02-26 12:34:35
品牌 Logo 应用领域
钰创 - ETRON 动态存储器双倍数据速率
页数 文件大小 规格书
60页 1029K
描述
32M x 16 bit DDRII Synchronous DRAM (SDRAM)

EM68B16CWQH-18H 数据手册

 浏览型号EM68B16CWQH-18H的Datasheet PDF文件第52页浏览型号EM68B16CWQH-18H的Datasheet PDF文件第53页浏览型号EM68B16CWQH-18H的Datasheet PDF文件第54页浏览型号EM68B16CWQH-18H的Datasheet PDF文件第56页浏览型号EM68B16CWQH-18H的Datasheet PDF文件第57页浏览型号EM68B16CWQH-18H的Datasheet PDF文件第58页 
EM68B16CWQH  
EtronTech  
Figure 35. Self refresh operation  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
Tm  
Tn  
tCK  
tCH  
tCL  
CK#  
CK  
>=tXSNR  
tRP*  
>=tXSRD  
CKE  
VIH(ac)  
VIL(ac)  
tIS  
tAOFD  
tIS  
VIL(ac)  
ODT  
CMD  
tIS  
tIH  
tIS  
tIH  
tIS tIH  
VIH(ac)  
VIL(ac)  
VIH(dc)  
VIL(dc)  
Self  
Refresh  
NOP  
NOP  
NOP  
Valid  
NOTE 1 Device must be in the "All banks idle" state prior to entering Self Refresh mode.  
NOTE 2 ODT must be turned off tAOFD before entering Self Refresh mode, and can be  
turned on again when tXSRD timing is satisfied.  
NOTE 3 tXSRD is applied for Read or a Read with autoprecharge command.  
t
XSNR is applied for any command except a Read or a Read with autoprecharge command.  
Figure 36. Basic power down entry and exit timing diagram  
CK  
CK#  
tIH  
tIS  
tIS tIH  
tIH  
tIS  
tIH  
CKE  
VALID  
or NOP  
VALID  
NOP  
NOP  
NOP  
VALID  
Command  
tCKE min  
tXP, tXARD  
tCKE(min)  
tXARDS  
Exit Power-Down mode  
Enter Power-Down mode  
Don't Care  
Figure 37.1.CKE intensive environment  
CK#  
CK  
tCKE  
tCKE  
CKE  
tCKE  
tCKE  
NOTE: DRAM guarantees all AC and DC timing & voltage specifications and proper DLL operation with intensive CKE operation  
Rev. 1.6  
55  
Oct. /2015  

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