Datasheet > EM639165TS-6G

EM639165TS-6G

更新时间： 2024-01-13 09:22:47

品牌	Logo	应用领域
钰创 - ETRON		内存集成电路光电二极管动态存储器
页数	文件大小	规格书
73页	1303K
描述
8Mega x 16 Synchronous DRAM (SDRAM)

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EM639165TS-6G 技术参数

EtronTech

EM639165

Write Enable: The WE# signal defines the operation commands in conjunction

with the RAS# and CAS# signals and is latched at the positive edges of CLK.

The WE# input is used to select the BankActivate or Precharge command and

Read or Write command.

WE#

Input

LDQM,

UDQM

Input

Data Input/Output Mask: Controls output buffers in read mode and masks

Input data in write mode.

DQ0-DQ15

Input /

Output

Data I/O: The DQ0-15 input and output data are synchronized with the positive

edges of CLK. The I/Os are maskable during Reads and Writes.

NC/RFU

V_DDQ

No Connect: These pins should be left unconnected.

Supply

DQ Power: Provide isolated power to DQs for improved noise immunity.

( 3.3V± 0.3V )

V_SSQ

Supply

DQ Ground: Provide isolated ground to DQs for improved noise immunity.

( 0 V )

V_DD

V_SS

Supply

Power Supply: +3.3V ± 0.3V

Ground

Rev 1.6 Feb. 2007

1 2 345 6 7...73

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型号	品牌	描述	获取价格	数据表
EM639165TS-6LG	ETRON	8Mega x 16 Synchronous DRAM (SDRAM)	获取价格
EM639165TS-75	ETRON	8Mega x 16bits SDRAM	获取价格
EM639165TS-75L	ETRON	8Mega x 16bits SDRAM	获取价格
EM639165TS-7G	ETRON	8Mega x 16 Synchronous DRAM (SDRAM)	获取价格
EM639165TS-7LG	ETRON	8Mega x 16 Synchronous DRAM (SDRAM)	获取价格
EM639165TS-8	ETRON	8Mega x 16bits SDRAM	获取价格