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EM63A165TS-7IG PDF预览

EM63A165TS-7IG

更新时间： 2024-11-13 01:02:11
品牌 Logo 应用领域
钰创 - ETRON 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
53页 565K
描述
16M x 16 bit Synchronous DRAM (SDRAM)

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中文翻译

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EM63A165TS-7IG 技术参数

是否Rohs认证： 符合生命周期：Contact Manufacturer
包装说明：TSOP2,Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.24
风险等级：5.67访问模式：FOUR BANK PAGE BURST
最长访问时间：5.4 ns其他特性：AUTO/SELF REFRESH
JESD-30 代码：R-PDSO-G54长度：22.22 mm
内存密度：268435456 bit内存集成电路类型：SYNCHRONOUS DRAM
内存宽度：16功能数量：1
端口数量：1端子数量：54
字数：16777216 words字数代码：16000000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：16MX16
封装主体材料：PLASTIC/EPOXY封装代码：TSOP2
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）：NOT SPECIFIED座面最大高度：1.2 mm
自我刷新：YES最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：0.8 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：10.16 mm
Base Number Matches：1

EM63A165TS-7IG 数据手册

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EM63A165  
EtronTech  
16M x 16 bit Synchronous DRAM (SDRAM)  
Preliminary (Rev. 2.2, Dec. /2013)  
Overview  
Features  
The EM63A165 SDRAM is a high-speed CMOS  
synchronous DRAM containing 256 Mbits. It is  
internally configured as 4 Banks of 4M word x 16  
DRAM with a synchronous interface (all signals are  
registered on the positive edge of the clock signal,  
CLK). Read and write accesses to the SDRAM are  
burst oriented; accesses start at a selected location  
and continue for a programmed number of locations in  
a programmed sequence. Accesses begin with the  
registration of a BankActivate command which is then  
followed by a Read or Write command.  
Fast access time from clock: 4.5/5/5.4 ns  
Fast clock rate: 200/166/143 MHz  
Fully synchronous operation  
Internal pipelined architecture  
4M word x 16-bit x 4-bank  
Programmable Mode registers  
- CAS Latency: 2 or 3  
- Burst Length: 1, 2, 4, 8, or full page  
- Burst Type: Sequential or Interleaved  
- Burst stop function  
•
•
•
•
•
•
The EM63A165 provides for programmable Read or  
Write burst lengths of 1, 2, 4, 8, or full page, with a  
burst termination option. An auto precharge function  
may be enabled to provide a self-timed row precharge  
that is initiated at the end of the burst sequence. The  
refresh functions, either Auto or Self Refresh are easy  
to use.  
Auto Refresh and Self Refresh  
8192 refresh cycles/64ms  
CKE power down mode  
•
•
•
•
•
•
•
±
Single +3.3V 0.3V power supply  
Industrial Temperature: -40~85°C  
Interface: LVTTL  
54-pin 400 mil plastic TSOP II package  
- Pb free and Halogen free  
54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package  
- Pb free and Halogen free  
By having a programmable mode register, the system  
can choose the most suitable modes to maximize its  
performance. These devices are well suited for  
applications requiring high memory bandwidth and  
particularly well suited to high performance PC  
applications.  
•
Table 1. Key Specifications  
EM63A165  
-5I/6I/7I  
5/6/7  
tCK3 Clock Cycle time(min.)  
tAC3 Access time from CLK (max.)  
tRAS Row Active time(min.)  
ns  
ns  
ns  
ns  
4.5/5/5.4  
40/42/42  
55/60/63  
tRC  
Row Cycle time(min.)  
Table 2. Ordering Information  
Part Number  
EM63A165TS-5IG  
EM63A165TS-6IG  
EM63A165TS-7IG  
EM63A165BM-5IH  
EM63A165BM-6IH  
EM63A165BM-7IH  
Frequency  
200MHz  
166MHz  
143MHz  
200MHz  
166MHz  
143MHz  
Package  
TSOP II  
TSOP II  
TSOP II  
FBGA  
FBGA  
FBGA  
TS : indicates TSOP II Package  
BM : indicates 8.0 x 8.0 x 1.2mm FBGA Package  
I : indicates Industrial Grade  
G: indicates Pb and Halogen Free for TSOPII Package  
H: indicates Pb free and Halogen Free for FBGA Package  
Etron Technology, Inc.  
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.  
TEL: (886)-3-5782345  
FAX: (886)-3-5778671  
Etron Technology, Inc. reserves the right to change products or specification without notice.  
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