Datasheet > EM636327Q-10

EM636327Q-10

更新时间： 2024-02-10 12:54:43

品牌	Logo	应用领域
钰创 - ETRON		内存集成电路动态存储器时钟
页数	文件大小	规格书
78页	1387K
描述
512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)

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技术参数
数据手册

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EM636327Q-10 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	compliant	风险等级：	5.77
Is Samacsys：	N	最长访问时间：	7.5 ns
最大时钟频率 (fCLK)：	100 MHz	I/O 类型：	COMMON
交错的突发长度：	1,2,4,8	JESD-30 代码：	R-PQFP-G100
内存密度：	16777216 bit	内存集成电路类型：	SYNCHRONOUS DRAM
内存宽度：	32	端子数量：	100
字数：	524288 words	字数代码：	512000
最高工作温度：	70 °C	最低工作温度：
组织：	512KX32	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	QFP
封装等效代码：	QFP100,.7X.9	封装形状：	RECTANGULAR
封装形式：	FLATPACK	电源：	3.3 V
认证状态：	Not Qualified	刷新周期：	2048
连续突发长度：	1,2,4,8,FP	最大待机电流：	0.003 A
子类别：	DRAMs	最大压摆率：	0.2 mA
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	GULL WING	端子节距：	0.635 mm
端子位置：	QUAD	Base Number Matches：	1

EM636327Q-10 数据手册

EtronTech

EM636327

512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)

Preliminary (12/98)

Features

Key Specifications

Fast access time from clock: 5/5/5.5/6.5/7.5 ns

Fast clock rate: 183/166/143/125/100 MHz

Fully synchronous operation

EM636327

- 55/6/7/8/10

5.5/6/7/8/10 ns

32/36/42/48/60 ns

Clock Cycle time(min.)

t_CK3

Internal pipelined architecture

Row Active time(max.)

t_RAS

Dual internal banks(256K x 32-bit x 2-bank)

Programmable Mode and Special Mode registers

- CAS# Latency: 1, 2, or 3

Access time from Read command 7/8/13/18/23 ns

t_AC1

t_AC3

t_RC

Access time from CLK(max.)

Row Cycle time(min.)

5/5/5.5/6.5/7.5 ns

48/54/63/72/90 ns

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: interleaved or linear burst

- Burst-Read-Single-Write

Ordering Information

Part Number

EM636327Q-10

EM636327R-10

EM636327TQ-10

EM636327JT-10

EM636327Q-8

EM636327R-8

EM636327TQ-8

EM636327JT-8

EM636327Q-7

EM636327TQ-7

EM636327Q-6

EM636327TQ-6

EM636327Q-55

EM636327TQ-55

Frequency

100MHz

125MHz

143MHz

166MHz

183MHz

Package

QFP

- Load Color or Mask register

Burst stop function

Individual byte controlled by DQM0-3

Block write and write-per-bit capability

Auto Refresh and Self Refresh

2048 refresh cycles/32ms

QFP (Reverse)

TQFP1.4

TQFP1.0

QFP

Single +3.3V±0.3V power supply

Interface: LVTTL

JEDEC 100-pin Plastic package

-QFP (body thickness=2.8mm)

-TQFP1.4 (body thickness=1.4mm)

-TQFP1.0 (body thickness=1.0mm)

QFP (Reverse)

TQFP1.4

TQFP1.0

QFP

TQFP1.4

QFP

TQFP1.4

QFP

TQFP1.4

Overview

The EM636327 SGRAM is a high-speed

page, with a burst termination option. An auto

precharge function may be enabled to provide a

self-timed row precharge that is initiated at the end

of the burst sequence. The refresh functions,

either Auto or Self Refresh are easy to use. In

addition, EM636327 features the write-per-bit and

the masked block write functions.

CMOS synchronous graphics DRAM containing 16

Mbits. It is internally configured as a dual 256K x

32 DRAM with a synchronous interface (all signals

are registered on the positive edge of the clock

signal, CLK). Each of the 256K x 32 bit banks is

organized as 1024 rows by 256 columns by 32 bits.

Read and write accesses to the SGRAM are burst

oriented; accesses start at a selected location and

continue for a programmed number of locations in

a programmed sequence. Accesses begin with the

registration of a BankActivate command which is

then followed by a Read or Write command.

By having a programmable mode register and

special mode register, the system can choose the

most suitable modes to maximize its performance.

These devices are well suited for applications

requiring high memory bandwidth, and when

combined with special graphics functions result in

The EM636327 provides for programmable

device particularly well suited to high

Read or Write burst lengths of 1, 2, 4, 8, or full

performance graphics applications.

Etron Technology, Inc.

1F, No. 1, Prosperity Rd. 1, Science-Based Industrial Park, Hsinchu, Taiwan, R.O.C

TEL: (886)-3-5782345 FAX: (886)-3-5779001

Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.

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EM636327Q-7	ETRON	512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)	获取价格
EM636327Q-8	ETRON	512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)	获取价格
EM636327R-10	ETRON	512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)	获取价格
EM636327R-8	ETRON	512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)	获取价格

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