Datasheet > EM638165BM-5H

EM638165BM-5H

更新时间： 2024-02-18 08:25:47

品牌	Logo	应用领域
钰创 - ETRON		动态存储器
页数	文件大小	规格书
53页	519K
描述
4M x 16 bit Synchronous DRAM (SDRAM)

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EM638165BM-5H 数据手册

EM638165

EtronTech

4M x 16 bit Synchronous DRAM (SDRAM)

Preliminary (Rev. 5.3, Dec. /2013)

Features

Overview

Fast access time from clock: 4.5/5.4/5.4 ns

Fast clock rate: 200/166/143 MHz

Fully synchronous operation

Internal pipelined architecture

1M word x 16-bit x 4-bank

Programmable Mode registers

- CAS Latency: 2 or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: Sequential or Interleaved

- Burst stop function

The EM638165 SDRAM is a high-speed CMOS

synchronous DRAM containing 64 Mbits. It is

internally configured as 4 Banks of 1M word x 16

DRAM with a synchronous interface (all signals are

registered on the positive edge of the clock signal,

CLK). Read and write accesses to the SDRAM are

burst oriented; accesses start at a selected location

and continue for a programmed number of locations

in a programmed sequence. Accesses begin with the

registration of a Bank Activate command which is

then followed by a Read or Write command.

•

The EM638165 provides for programmable Read

or Write burst lengths of 1, 2, 4, 8, or full page, with a

burst termination option. An auto precharge function

may be enabled to provide a self-timed row precharge

that is initiated at the end of the burst sequence. The

refresh functions, either Auto or Self Refresh are easy

to use. By having a programmable mode register, the

system can choose the most suitable modes to

maximize its performance. These devices are well

suited for applications requiring high memory

bandwidth and particularly well suited to high

performance PC applications.

- Optional drive strength control

Auto Refresh and Self Refresh

4096 refresh cycles/64ms

•

CKE power down mode

Single +3.3V ± 0.3V power supply

Operating Temperature: TA = 0~70°C

Interface: LVTTL

• 54-pin 400 mil plastic TSOP II package

- Pb and Halogen Free

54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package

- Pb free and Halogen free

•

Table1. Key Specifications

EM638165

- 5/6/7

5/6/7

tCK3

tAC3

tRAS

Clock Cycle time(min.)

Access time from CLK(max.)

Row Active time(min.)

Row Cycle time(min.)

4.5/5.4/5.4 ns

40/42/42 ns

55/60/63 ns

tRC

Table 2. Ordering Information

Part Number

Frequency

200MHz

166MHz

143MHz

200MHz

166MHz

143MHz

Package

TSOP II

FBGA

EM638165TS -5G

EM638165TS -6G

EM638165TS -7G

EM638165BM -5H

EM638165BM -6H

EM638165BM -7H

FBGA

TS: indicates TSOPII Package

BM: indicates FBGA package

G: indicates Pb and Halogen Free for TSOPII Package

H: indicates Pb free and Halogen free

Etron Technology, Inc.

No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.

TEL: (886)-3-5782345

FAX: (886)-3-5778671

Etron Technology, Inc. reserves the right to change products or specification without notice.

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与EM638165BM-5H相关器件

型号	品牌	获取价格	描述	数据表
EM638165BM-5IH	ETRON	获取价格	4M x 16 bit Synchronous DRAM (SDRAM)
EM638165BM-6H	ETRON	获取价格	4M x 16 bit Synchronous DRAM (SDRAM)
EM638165BM-6IH	ETRON	获取价格	4M x 16 bit Synchronous DRAM (SDRAM)
EM638165BM-7H	ETRON	获取价格	4M x 16 bit Synchronous DRAM (SDRAM)
EM638165BM-7IH	ETRON	获取价格	4M x 16 bit Synchronous DRAM (SDRAM)
EM638165TS-10	ETRON	获取价格	4Mega x 16 Synchronous DRAM (SDRAM)
EM638165TS-5G	ETRON	获取价格	4M x 16 bit Synchronous DRAM (SDRAM)
EM638165TS-5IG	ETRON	获取价格	4M x 16 bit Synchronous DRAM (SDRAM)
EM638165TS-6	ETRON	获取价格	4Mega x 16 Synchronous DRAM (SDRAM)
EM638165TS-6G	ETRON	获取价格	4M x 16 bit Synchronous DRAM (SDRAM)

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