EtronTech
EM637327
1Mega x 32 SGRAM
Preliminary (08/99)
Features
Pin Assignment (Top View)
Fast access time from clock: 4.5/5.5/5.5/6 ns
Fast clock rate: 200/166/143/125 MHz
Fully synchronous operation
Internal pipelined architecture
Dual internal banks (512K x 32bit x 2bank)
Programmable Mode
·
·
·
·
·
·
1
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQ3
VDDQ
DQ4
DQ5
SSQ
DQ6
DQ7
DQ28
VDDQ
DQ27
DQ26
2
3
4
5
6
7
8
V
V
SSQ
DQ25
DQ24
VDDQ
DQ15
DQ14
VSSQ
DQ13
DQ12
VDDQ
VSS
VDDQ
DQ16
DQ17
VSSQ
DQ18
DQ19
VDDQ
VDD
9
- CAS# Latency: 1, 2, or 3
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: interleaved or linear burst
- Burst-Read-Single-Write
- Load Color or Mask register
Burst stop function
Individual byte controlled by DQM0-3
Block write and write-per-bit capability
Auto Refresh and Self Refresh
2048 refresh cycles/32ms
V
SS
V
DD
DQ20
DQ21
VSSQ
DQ22
DQ23
VDDQ
DQM0
DQM2
WE#
DQ11
DQ10
VSSQ
DQ9
DQ8
VDDQ
NC
DQM3
DQM1
CLK
CKE
DSF
·
·
·
·
·
·
·
·
CAS#
RAS#
CS0#
BS
NC
A8 (AP)
A9
Single +3.3V ± 0.3V power supply
Interface: LVTTL
JEDEC 100-pin Plastic package
- QFP (body thickness=2.8mm)
- TQFP1.4 (body thickness=1.4mm)
Overview
The EM637327 SGRAM is a high-speed CMOS
synchronous graphics DRAM containing 32 Mbits. It is
internally configured as a dual 512K x 32 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CLK). Each of the
512K x 32 bit banks is organized as 2048 rows by 256
columns by 32 bits. Read and write accesses to the
SGRAM are burst oriented; accesses start at a selected
location and continue for a programmed number of
locations in a programmed sequence. Accesses begin
with the registration of a BankActivate command which
is then followed by a Read or Write command.
Key Specifications
EM637327
- 5/6/7/8
5/6/7/8 ns
Clock Cycle time(min.)
tCK3
25/30/35/40 ns
4.5/5.5/5.5/6 ns
55/60/63/72 ns
Row Active time(max.)
tRAS
tAC3
tRC
Access time from CLK(max.)
Row Cycle time(min.)
The EM637327 provides for programmable Read
or Write burst lengths of 1, 2, 4, 8, or full page, with a
burst termination option. An auto precharge function
may be enabled to provide a self-timed row precharge
that is initiated at the end of the burst sequence. The
refresh functions, either Auto or Self Refresh are easy
to use.
Ordering Information
Part Number
EM637327Q-5
EM637327TQ-5
EM637327Q-6
EM637327TQ-6
EM637327Q-7
EM637327TQ-7
EM637327Q-8
EM637327TQ-8
Frequency
200 MHz
200 MHz
166 MHz
166 MHz
143 MHz
143 MHz
125 MHz
125 MHz
Package
QFP
TQFP1.4
QFP
TQFP1.4
QFP
By having a programmable mode register, the
system can choose the most suitable modes to
maximize its performance. These devices are well
suited for applications requiring high memory
bandwidth.
TQFP1.4
QFP
TQFP1.4
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C
TEL: (886)-3-5782345 FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.