EL6F11

更新时间： 2024-11-12 06:56:31

品牌	Logo	应用领域
可天士 - KODENSHI		红外LED 光电二极管
页数	文件大小	规格书
2页	201K
描述
Infrared Emitting Diodes(GaAs)

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中文翻译

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技术参数
数据手册

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EL6F11 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.65	光电设备类型：	INFRARED LED
Base Number Matches：	1

EL6F11 数据手册

Infrared Emitting Diodes(GaAs)

K O D E N S H I

E L 6 F 1 1

DIMENSIONS

(Unit : mm)

The EL6F11 is a high- power GaAs IRED mounted in

a clear epoxy package. This IRED is both compact and

easy to mount.

FEATURES

• Plastic mold package with a large caliber lens

• High output power

APPLICATIONS

• Optical switches

MAXIMUM RATINGS

( T a = ℃2)5

I t e m

S y m b o Rl a t i n g U n i t

Reverse voltage

Forward current

Power dissipation

m A

m W

5 0

8 0

Pulse forward current ^*

Operating temp.

Storage temp.

T o p r .

T s t g .

T s o l .

2 5

4 0

2 6 0

8 5

℃

8 5

℃

Soldering temp.

℃

*1. pulse width tw 100 μsec.period T = 1 0 m s e c .

*2. For MAX.5 seconds at the position of 2 mm from the package

ELECTRO-OPTICAL CHARACTERISTICS

( T a = ℃2 )5

I t e m

Forward voltage

Reverse current

S y m b o l

λ p

Δ λ

C o n d i t i o n s

M i n . T y p .

1 . 3

M a x .

U n i t .

I = 5 0 m A

1 . 6 5

1 0

μA

n m

V = 4 V

I = 2 0 m A

I = 5 0 m A

I = 2 0 m A

9 4 0

5 0

6 . 0

± 2 5

Peak emission wavelength

Spectral bandwidth

Radiant intensity ^*

2 . 5

d e g .

Half angle

*3. Measured by tester of KODENSHI CORP.

Δ θ

- 1-

中文翻译

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