EGP50B

更新时间： 2024-11-11 22:40:43

品牌	Logo	应用领域
威世 - VISHAY		整流二极管局域网超快恢复二极管快速恢复二极管
页数	文件大小	规格书
2页	62K
描述
GLASS PASSIVATED FAST EFFICIENT RECTIFIER

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中文翻译

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技术参数
数据手册

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EGP50B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.23
Is Samacsys：	N	配置：	SINGLE
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	0.95 V
JESD-609代码：	e0	元件数量：	1
最高工作温度：	150 °C	最大输出电流：	5 A
最大重复峰值反向电压：	100 V	最大反向恢复时间：	0.05 µs
子类别：	Rectifier Diodes	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

EGP50B 数据手册

EGP50A THRU EGP50G

GLASS PASSIVATED FAST EFFICIENT RECTIFIER

Reverse Voltage - 50 to 400 Volts

Forward Current - 5.0 Amperes

FEATURES

♦ Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

♦ Glass passivated cavity-free junction

♦ Superfast recovery time for high efficiency

♦ Low forward voltage, high

Case Style GP20

1.0 (25.4)

MIN.

0.210 (5.3)

current capability

♦ Low leakage current

0.190 (4.8)

DIA.

♦ High surge current capability

0.375 (9.5)

0.285 (7.2)

♦ High temperature metallurgically bonded construction

♦ High temperature soldering guaranteed:

300°C/10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

1.0 (25.4)

MIN.

0.042 (1.07)

MECHANICAL DATA

Case: Molded plastic over solid glass body

Terminals: Axial leads, solderable per MIL-STD-750,

Method 2026

0.037 (0.94)

DIA.

Dimensions in inches and (millimeters)

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 0.03 ounce, 0.8 gram

Glass-plastic encapsulation technique is covered by

Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

EGP

50A

EGP

50B

EGP

50C

EGP

50D

EGP

50F

EGP

50G

SYMBOLS

V_RRM

V_RMS

V_DC

UNITS

Volts

Maximum recurrent peak reverse voltage

Maximum RMS voltage

100

150

105

150

200

140

200

300

210

300

400

280

400

Maximum DC blocking voltage

100

Maximum average forward rectified current

0.375" (9.5mm) lead length at T_L=55°C

I_(AV)

5.0

Amps

Peak forward surge current

8.3ms single half sine-wave superimposed

on rated load

I_FSM

150.0

Maximum instantaneous forward voltage at 5.0A

V_F

I_R

0.95

1.25

Volts

µA

Maximum DC reverse current

at rated DC blocking voltage

T_A=25°C

T_A=125°C

5.0

50.0

Maximum reverse recovery time _{(NOTE 1)}

Typical thermal resistance _{(NOTE 2)}

Typical junction capacitance _{(NOTE 3)}

trr

50.0

R_ΘJA

R_ΘJL

20.0

5.0

°C\W

C_J

°C

Operating junction and storage temperature range

T_J,T_STG

-65 to +150

NOTES:

(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, Irr=0.25A

(2) Thermal resistance from junction to ambient and from junction of lead at 0.375” (9.5mm) lead length,

both leads measured attached to heat sinks

(3) Measured at 1.0 MH_Zand applied reverse voltage of 4.0 Volts

4/98

中文翻译

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与EGP50B相关器件

型号	品牌	获取价格	描述	数据表
EGP50B/100	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP50B/4E	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP50B/4F	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP50B/4G	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP50B/51	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP50B/53	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP50B/54	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP50B/56	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP50B/66	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, PLASTIC, GP20, 2 PIN
EGP50B/74	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, PLASTIC, GP20, 2 PIN

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